There is provided a semiconductor device comprising: a semiconductor substrate including
a drift region of a first conductivity type; an emitter region of the first conductivity type …

(57) ABSTRACT A method of processing a semiconductor device includes: providing a
semiconductor body with a drift region; forming trenches extending into the semiconductor …

(57) ABSTRACT A power semiconductor device includes an active cell region with a drift
region of a first conductivity type, a plurality of IGBT cells arranged within the active cell …

There is provided a semiconductor device including a drift region of a first conductivity type,
a first semiconductor region of the first conductivity type provided above the drift region and …

H01L22/12—Measuring as part of the manufacturing process for structural parameters, eg
thickness, line width, refractive index, temperature, warp, bond strength, defects, optical …

H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating
or switching and having potential barriers; Capacitors or resistors having potential barriers …

A tub of a semiconductor device includes a cool zone with a first projected operating
temperature and a hot zone with a second projected operating temperature greater than the …

There is provided a semiconductor device comprising: a semiconductor substrate including
a drift region of a first conductivity type; an emitter region of the first conductivity type …

2023-02-22 Assigned to INFINEON TECHNOLOGIES AG reassignment INFINEON
TECHNOLOGIES AG ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

2022-09-05 Assigned to FUJI ELECTRIC CO., LTD. reassignment FUJI ELECTRIC CO.,
LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS) …