From ferroelectric material optimization to neuromorphic devices
Due to the voltage driven switching at low voltages combined with nonvolatility of the
achieved polarization state, ferroelectric materials have a unique potential for low power …
achieved polarization state, ferroelectric materials have a unique potential for low power …
Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era
Growth of data eases the way to access the world but requires increasing amounts of energy
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
to store and process. Neuromorphic electronics has emerged in the last decade, inspired by …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
[HTML][HTML] Roadmap to neuromorphic computing with emerging technologies
The growing adoption of data-driven applications, such as artificial intelligence (AI), is
transforming the way we interact with technology. Currently, the deployment of AI and …
transforming the way we interact with technology. Currently, the deployment of AI and …
Electronic Synapses Enabled by an Epitaxial SrTiO3‐δ / Hf0.5Zr0.5O2 Ferroelectric Field‐Effect Memristor Integrated on Silicon
N Siannas, C Zacharaki, P Tsipas… - Advanced Functional …, 2024 - Wiley Online Library
Synapses play a vital role in information processing, learning, and memory formation in the
brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the …
brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the …
Silicon‐Compatible Ferroelectric Tunnel Junctions with a SiO2/Hf0.5Zr0.5O2 Composite Barrier as Low‐Voltage and Ultra‐High‐Speed Memristors
H Wang, Z Guan, J Li, Z Luo, X Du, Z Wang… - Advanced …, 2024 - Wiley Online Library
The big data era requires ultrafast, low‐power, and silicon‐compatible materials and
devices for information storage and processing. Here, ferroelectric tunnel junctions (FTJs) …
devices for information storage and processing. Here, ferroelectric tunnel junctions (FTJs) …
Cycling Waveform Dependent Wake-Up and ON/OFF Ratio in Al2O3/Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction Devices
The wake-up behavior and ON/OFF current ratio of TiN–Al2O3–Hf0. 5Zr0. 5O2–W
ferroelectric tunnel junction (FTJ) devices were investigated for different wake-up voltage …
ferroelectric tunnel junction (FTJ) devices were investigated for different wake-up voltage …
Ferroelectric Tunnel Junction Memristors for In‐Memory Computing Accelerators
Neuromorphic computing has seen great interest as leaps in artificial intelligence (AI)
applications have exposed limitations due to heavy memory access, with the von Neumann …
applications have exposed limitations due to heavy memory access, with the von Neumann …
On-chip integrated atomically thin 2D material heater as a training accelerator for an electrochemical random-access memory synapse for neuromorphic computing …
An artificial synapse based on oxygen-ion-driven electrochemical random-access memory
(O-ECRAM) devices is a promising candidate for building neural networks embodied in …
(O-ECRAM) devices is a promising candidate for building neural networks embodied in …
Weight Update in Ferroelectric Memristors with Identical and Nonidentical Pulses
S Lancaster, M Remillieux, M Engl… - … Applied Materials & …, 2024 - ACS Publications
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power,
scalable, field-driven analog operation. In order to harness their full potential, operation with …
scalable, field-driven analog operation. In order to harness their full potential, operation with …