(57) ABSTRACT A nanowire array is described herein. The nanowire array comprises a
substrate and a plurality of nanowires extending essentially vertically from the substrate; …

A method for performing a selective etching process is described. The method includes
preparing a substrate having a silicon layer (Si) and a silicon-germanium (SiGe x) layer, and …

Described herein is a device comprising: a Substrate; one or more of a nanostructure
extending essentially perpendicu larly from the substrate; wherein the nanostructure …

US PATENT DOCUMENTS 1918, 848 A 4, 1929 Land 4,017,332 A 4, 1977 James
4,827,335 A 5, 1989 Saito 4,880,613 A 11, 1989 Satoh 4,896,941 A 1/1990 Hayashi …

An embodiment relates to a device comprising a Substrate, a nanowire and a doped
epitaxial layer Surrounding the nanow ire, wherein the nanowire is configured to be both a …

An embodiment relates to a device comprising a substrate having a front side and a back-
side that is exposed to incom ing radiation; a nanowire disposed on the substrate and an …

OW to electrical signals and the gate electrode is operable to pinch off or allow current flow
through the at least one nanopillar. The image sensor can have a plurality of pixels arranged …

An imaging device including a plurality of photo-sensitive elements suitable for imaging
small objects less than 500 nm in size. Each of the photo-Sentive elements forms a passive …

(57) ABSTRACT A photovoltaic device operable to convert light to electricity, comprising a
substrate, a plurality of structures essentially perpendicular to the Substrate, one or more …

An imaging device formed as an active pixel array combining a CMOS fabrication process
and a nanowire fabrication pro cess. The pixels in the array may include a single or multiple …