Progress in infrared photodetectors since 2000
C Downs, TE Vandervelde - Sensors, 2013 - mdpi.com
The first decade of the 21st-century has seen a rapid development in infrared photodetector
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
technology. At the end of the last millennium there were two dominant IR systems, InSb-and …
Submonolayer quantum dots for optoelectronic devices
Semiconductor quantum dots (QD) have been extensively applied in optical and
optoelectronic devices because of their strong quantum confinement and bandgap …
optoelectronic devices because of their strong quantum confinement and bandgap …
Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons
AI Yakimov, VV Kirienko, AA Bloshkin, VA Armbrister… - Optics express, 2017 - opg.optica.org
We report the fabrication and characterization of a multilayer Ge quantum dot detector grown
on Si_1− xGex virtual substrate (x= 0.18) for photovoltaic mid-wave infrared photodetection …
on Si_1− xGex virtual substrate (x= 0.18) for photovoltaic mid-wave infrared photodetection …
Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors
The performance of infrared photodetectors based on submonolayer quantum dots was
investigated as a function of the arsenic flux. All the devices showed similar figures of merit …
investigated as a function of the arsenic flux. All the devices showed similar figures of merit …
Photoluminescence study of InAs/InGaAs sub-monolayer quantum dot infrared photodetectors with various numbers of multiple stack layers
This study investigated the effects of the number of stacking layers (S) on the optical
properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by …
properties of InAs/InGaAs sub-monolayer quantum dot (SML-QD) infrared photodetectors by …
Higher performance optoelectronic devices with In0. 21Al0. 21Ga0. 58As/In0. 15Ga0. 85As capping of III-V quantum dots
Abstract Impact of combinational (In 0.21 Al 0.21 Ga 0.58 As/In 0.15 Ga 0.85 As and In 0.15
Ga 0.85 As/In 0.21 Al 0.21 Ga 0.58 As) capping on the strain, photoluminescence, and …
Ga 0.85 As/In 0.21 Al 0.21 Ga 0.58 As) capping on the strain, photoluminescence, and …
A detailed study of the effects of rapid thermal annealing on the luminescence properties of InAs sub-monolayer quantum dots
A Manohar, S Sengupta, H Ghadi… - Journal of Luminescence, 2015 - Elsevier
We studied the effects of post-growth annealing on InAs sub-monolayer samples with
different numbers of quantum dot stacks embedded in InGaAs wells. Four samples, with 4, 6 …
different numbers of quantum dot stacks embedded in InGaAs wells. Four samples, with 4, 6 …
Fabrication and characterization of InAs/InGaAs sub-monolayer quantum dot solar cell with dot-in-a-well structure
To improve the efficiency of InAs quantum dot solar cells (QDSCs), we propose a QDSC
structure with sub-monolayer (SML) QDs. The optical and electrical properties of Stranski …
structure with sub-monolayer (SML) QDs. The optical and electrical properties of Stranski …
The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructures
The effect of additional Al X Ga 1− X As barrier layer on luminescence and structural
behaviors of four cycle InAs/In 0.15 Ga 0.85 As/GaAs based quantum dots (ie, standard …
behaviors of four cycle InAs/In 0.15 Ga 0.85 As/GaAs based quantum dots (ie, standard …
Hybrid strain-coupled multilayer SK and SML InAs/GaAs quantum dot heterostructure: Enabling higher absorptivity and strain minimization for enhanced optical and …
The size and shape of self-assembled quantum dots (QDs) in the top layer of a strain-
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …
coupled multilayer Stranski-Krastanov (SK) type QD heterostructure is decided by the effect …