Second Revision: September 9, 2008 XQR5VFX140 heavy ion latchup results (from Aug. 2
testing) added. Additional minor technical details and editorial corrections and clarifications …

Electron-induced single-event upsets (SEUs) are observed in 45-nm and 28-nm bulk
complementary metal-oxide semiconductor static random-access memory-based field …

This paper presents the transient dose rate (TDR) effect of analog Delay Locked Loops
(DLLs). The analog DLL circuits are built upon a previous design, and the typical …

This article investigates the transient dose rate effect (TDRE) of two types of level-shifting
transceivers. Experimental results show that both transceivers have a high latch-up …

The transient dose rate effect (TDRE) on analog phase locked loop (PLL) is presented in this
paper. New TDRE models of NMOS and PMOS are proposed through the combination of …

The impact of transient ionizing radiation effects on a 4-Mb static random access memory
(SRAM) circuit which has an input–output (IO) supply voltage and a core supply voltage was …

This article investigates the transient dose rate effect (TDRE) on the system-in-package (SiP)
SZ0501 experimentally. A specialized program is designed for TDRE tests. With the …

This work shows that the static random access memory (SRAM) error rate for a commercial
65-nm device in a dose rate environment can be highly dependent upon the integrated dose …

Radiation Test Consortium (XRTC) single-event measurements for three of the latest
generation of radiation-tolerant reconfigurable FPGAs from Xilinx (90 nm, copper …

This paper qualitatively investigates the transient dose rate effect (TDRE) on clock resources
of the JXCV5SX95T FPGA, including DLL (Delay Locked Loop), PLL (Phase Locked Loop) …