Diamond, silicon carbide, gallium nitride, aluminum nitride, and boron nitride are currently
under development for both electronic and optoelectronic semiconductor devices …

Semiconductor Materials presents physico-chemical, electronic, electrical, elastic,
mechanical, magnetic, optical, and other properties of a vast group of elemental, binary, and …

Single crystal GaN films with a wurtzite structure were grown on the basal plane of sapphire.
A high density of threading dislocations parallel to the c-axis crossed the film from the …

Abstract The temperature-dependent (10–300 K) optical band gap E 0 (T) of the epitaxial
metastable zinc-blende-structure β-GaN (001) 4× 1 has been determined by modulated …

This Third Edition of ELECTRONS IN SOLIDS: AN INTRODUCTORY SURVEY, is the result
of a thorough re-examination of the entire text, incorporating suggestions and corrections by …

High power electronics using wide bandgap materials are maturing rapidly, and significant
market growth is expected in a near future. Ultra wide bandgap materials, which have an …

The IV characteristics of titanium contacts on polycrystalline diamond have been correlated
with x-ray-photoelectron-spectroscopy (XPS) and Auger-electron-spectroscopy (AES) …

Electronic-structure calculations allow us to predict that hypothetical ordered mixed crystals
of c-BN and diamond representative of the expected short-range order in the alloys show a …

Gem-quality single crystals of diamond were grown by homoepitaxy using microwave
plasma assisted chemical vapor deposition. Raman spectra of the (001) films show very low …

The gold–polycrystalline-diamond interface has been characterized by x-ray-photoelectron-
spectroscopy (XPS), Auger-electron-spectroscopy (AES), and current-voltage (IV) …