Molecular dynamics (MD) simulation was employed in this study to elucidate the dislocation/
amorphization-based plasticity mechanisms in single crystal 3C–SiC during nanometric …

Large-scale first-principles calculations were performed to determine the stability and
mobility properties of screw dislocations in common silicon carbide polytypes (4H, 2H and …

Domain boundaries (DBs) generated during the growth of cubic silicon carbide (3C-SiC) on
(001) Si and their interaction with stacking faults (SFs) were studied in this work. Direct …

Abstract 4H-SiC has gained attention as a material for advanced power devices. In this
paper, we investigate the surface effect on the conversion from screw-type basal plane …

Eelectrically active defects in 3C–SiC are investigated by considering the structures and
interactions of planar defects. An anti-phase boundary (APB) largely degrades the blocking …

Classical molecular dynamics simulations are used to investigate the 3D evolution of
stacking faults (SFs), including the partial dislocation (PD) loops enclosing them, during …

In order to reduce harmful dislocations in the 4H-SiC substrate, the improvement technique
of basal plane dislocation-threading edge dislocation (BPD-TED) conversion ratio has been …

In order to clarify the plastic deformation mechanism of silicon carbide in cubic phase (3C-
SiC), molecular dynamics (MD) simulations are performed on the nanoindentation using a …

Segregation behaviors of yttrium (Y) and calcium (Ca) cation dopant species near zirconia
(1 1 1) surfaces have been investigated utilizing atomistic simulations. The results reveal …

Due to their exceptional physical and chemical properties such as high strength, high
thermal conductivity, high stability at high temperature, high resistance to shocks, low …