C Song, Y You, X Chen, X Zhou, Y Wang… - Nanotechnology, 2018 - iopscience.iop.org
Antiferromagnetic materials, which have drawn considerable attention recently, have fascinating features: they are robust against perturbation, produce no stray fields, and exhibit …
S Wang, W Qin, S Zhang, Y Lou, C Liu, T Wu, Q He… - Nano Letters, 2022 - ACS Publications
The demand for emerging applications at the terahertz frequencies motivates the development of novel and multifunctional devices for the generation and manipulation of …
Using first-principles transport calculations, we predict that the anisotropic magnetoresistance (AMR) of single-crystal Co x Fe 1-x alloys is strongly dependent on the …
Recently, the planar Hall effect has attracted tremendous interest. In particular, an in-plane magnetization can induce an anomalous planar Hall effect with a 2 π/3 period for hexagon …
We achieve current-induced switching in collinear insulating antiferromagnetic CoO/Pt, with fourfold in-plane magnetic anisotropy. This is measured electrically by spin Hall …
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in …
J Ye, W He, Q Wu, HL Liu, XQ Zhang, ZY Chen… - Scientific reports, 2013 - nature.com
The epitaxial growth of ultrathin Fe film on Si (111) surface provides an excellent opportunity to investigate the contribution of magnetic anisotropy to magnetic behavior. Here, we …
J Xu, J Xia, X Zhang, C Zhou, D Shi, H Chen, T Wu… - Physical Review Letters, 2022 - APS
The antiferromagnet is considered to be a promising hosting material for the next generation of magnetic storage due to its high stability and stray-field-free property. Understanding the …
We have studied the temperature dependence of the exchange bias effect in epitaxial Co/CoO bilayer structures with in-plane uniaxial magnetocrystalline anisotropy. We have …