Germanium‐based nanomaterials have emerged as important candidates for next‐
generation energy‐storage devices owing to their unique chemical and physical properties …

Conspectus This Account describes a new electrochemical synthetic strategy for direct
growth of crystalline covalent group IV and III–V semiconductor materials at or near ambient …

Germanium (Ge) is a group IV semiconductor with superior electronic properties compared
with silicon, such as larger carrier mobilities and smaller effective masses. It is also a …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

Conspectus This Account describes and summarizes the latest work from our laboratory on
developing and maturing strategies based on low-temperature liquid metals as reaction …

High-performance Li ion battery anodes have been made using Ge microwire films
containing high levels of residual gallium (Ga). These materials were prepared by the …

Highly ordered crystalline Ge microwire arrays with individual diameters larger than 1 μm
have been grown in aqueous solutions at ambient pressure and below the boiling point of …

The electrochemical liquid–liquid–solid (ec-LLS) deposition of crystalline germanium (Ge) in
a eutectic mixture of liquid gallium (Ga) and indium (In) was analyzed as a function of liquid …

Germanium (Ge) nanowires were fabricated by electrochemical deposition on titanium‐
coated silicon substrate. Arrays of nanowires with different mean diameters were obtained …

Ge and GeSn alloy nanowires exhibit a widely application potential in the fields of
nanoscale electronic and optoelectronic devices, furthermore, they are important candidates …