Novel approach for augmented carrier transfer and reduced Fermi level pinning effect in InAs surface quantum dots
The present work introduces an in-situ technique to tune the inter-dot coupling between
vertically aligned InAs surface and buried quantum dots (SQD and BQD). Here, we utilize …
vertically aligned InAs surface and buried quantum dots (SQD and BQD). Here, we utilize …
Improvement in Performance of InAs Surface Quantum Dot Heterostructure-Based H2S Gas Sensor by Introducing Buried Quantum Dot Layer
In this work, we have demonstrated InAs surface quantum dot (SQD)-based gas sensors.
The epitaxial growth of the strain-coupled and uncoupled InAs/GaAs QD heterostructures is …
The epitaxial growth of the strain-coupled and uncoupled InAs/GaAs QD heterostructures is …
In-situ tailoring of band alignment between strain-coupled surface and buried InAs/GaAs quantum dots for sensor applications
This paper reports a comparative study of InAs/GaAs quantum dots (QDs) heterostructures
with vertically aligned strain-coupled uncapped and capped buried dots, epitaxially grown …
with vertically aligned strain-coupled uncapped and capped buried dots, epitaxially grown …
A theoretical study on strain and optical property of InAs SK quantum dot with varying capping in SK-SML coupled surface quantum dot heterostructure
In the past decade, surface quantum dots (SQDs) have been thoroughly investigated for
sensing applications. The SQDs suffer from the limitations of non-uniformity dot distribution …
sensing applications. The SQDs suffer from the limitations of non-uniformity dot distribution …