A very detailed investigation of high-speed silicon–germanium (SiGe) heterojunction bipolar
transistors (HBTs) showed an underestimation of the measured peak cutoff frequency by …

The impact of back end stress on the electrical characteristics of SiGe HBTs was
investigated experimentally and theoretically. It was found that collector currents depend …

Stress investigations have been carried out on SiGe HBTs from STMicroelectronics
BiCMOS9MW technology. The strain created by the stack of metal connections impacts the …

The third-generation (200áGHz) silicon–germanium heterojunction bipolar transistors were
irradiated with 100áMeV oxygen [O7+] ions in the dose range from 1 to 100áMrad. The …

This paper demonstrates that collector current (), dc current gain (), cutoff frequency (), and
maximum oscillation frequency () of bipolar transistors (BJTs) can be improved by uniaxial …

Device structure and fabrication methods for a bipolar junction transistor. One or more trench
isolation regions are formed in a Substrate to define a device region having a first width. A …

A novel SiGe HBT architecture is designed by introducing the embedded Si 1-y Ge y stress
raiser into the collector. In the proposed HBT structure, the emission region, the base region …

In order to further improve the high-frequency characteristics of highly scaled SiGe HBT and
consider the compatibility with the mature CMOS technology, a new SiGe HBT structure is …

Kurzfassung Motivation, Ziel und Aufgabe der Dissertation: Für
Hochgeschwindigkeitskommunikation, Radar, etc. sind Silizium-Germanium …

Ce document décrit mes activités de recherche et d'encadrement depuis ma prise de
fonction au 1er octobre 2007 au Laboratoire IMS, dans le groupe «Nanoélectronique», au …