45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell
This paper reports a 45nm spin-transfer-torque (STT) MRAM embedded into a standard
CMOS logic platform that employs low-power (LP) transistors and Cu/low-k BEOL. We …
CMOS logic platform that employs low-power (LP) transistors and Cu/low-k BEOL. We …
High density ST-MRAM technology
JM Slaughter, ND Rizzo, J Janesky… - 2012 International …, 2012 - ieeexplore.ieee.org
We review key properties for commercial ST-MRAM circuits, discuss the challenges to
achieving the many performance and scaling goals that are being addressed in current …
achieving the many performance and scaling goals that are being addressed in current …
Emerging spintronic memories
Spintronic memories are emerging as one of the next generation storage technologies to
replace hard disk drives and current solid state memories. This chapter reviews the …
replace hard disk drives and current solid state memories. This chapter reviews the …
Interconnects scaling challenge for sub-20nm spin torque transfer magnetic random access memory technology
T Min, Z Tokei, GS Kar, S Coseman… - IEEE International …, 2014 - ieeexplore.ieee.org
The scaling challenges of STT-MRAM read operation down to sub-20nm is discussed.
Various contributing factors to the MTJ cell resistance variation were investigated with focus …
Various contributing factors to the MTJ cell resistance variation were investigated with focus …
8 Spin-Transfer-Torque
K Lee - Nanoscale Semiconductor Memories: Technology and …, 2017 - books.google.com
As silicon industry is moving toward the end of technology roadmap, providing cost-effective
and power-efficient system-on-chip memory solutions has become ever more challenging …
and power-efficient system-on-chip memory solutions has become ever more challenging …