The exponential growth of data across various domains of human society necessitates the rapid and efficient data processing. In many contemporary data-intensive applications …
In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO 2- based ferroelectric field-effect transistor (FeFET) is investigated using technology computer …
The discovery of ferroelectric hafnium oxide revived the research on ferroelectric integrated devices in microelectronics for memory, radio frequency as well as piezoelectric or …
In this invited article we present a comprehensive overview of 28 nm high-k-metal gate- based ferroelectric field effect transistor devices for synaptic applications. The devices under …
In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO2- based ferroelectric field-effect transistor (FeFET) is investigated using technology computer …