Review and analysis of SiC MOSFETs' ruggedness and reliability
J Wang, X Jiang - IET Power Electronics, 2020 - Wiley Online Library
SiC MOSFETs (silicon carbide metal‐oxide semiconductor field‐effect transistors) are
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
replacing Si insulated gate bipolar transistors in many power conversion applications due to …
Performance and reliability review of 650 V and 900 V silicon and SiC devices: MOSFETs, cascode JFETs and IGBTs
The future of power conversion at low-to-medium voltages (around 650 V) poses a very
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
interesting debate. At low voltages (below 100 V), the silicon (Si) MOSFET reigns supreme …
Single-pulse avalanche mode robustness of commercial 1200 V/80 mΩ SiC MOSFETs
MD Kelley, BN Pushpakaran… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Commercialization of 1200-V silicon carbide (SiC) MOSFET has enabled power electronic
design with improved efficiency as well as increased power density. High-voltage spikes …
design with improved efficiency as well as increased power density. High-voltage spikes …
Comprehensive Investigations on Degradations of Dynamic Characteristics for SiC Power MOSFETs Under Repetitive Avalanche Shocks
In this work, degradations of dynamic characteristics for silicon carbide (SiC) power metal-
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
oxide-semiconductor field-effect transistors under repetitive avalanche shocks are …
Investigation on single pulse avalanche failure of SiC MOSFET and Si IGBT
In this work, avalanche ruggedness and failure mechanism of SiC MOSFET in single-pulse
Unclamped Inductive Switching (UIS) test are investigated and compared with Si IGBT. The …
Unclamped Inductive Switching (UIS) test are investigated and compared with Si IGBT. The …
Comprehensive assessment of avalanche operating boundary of SiC planar/trench MOSFET in cryogenic applications
The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe
operation of the power conversion systems, particularly under the extreme temperature …
operation of the power conversion systems, particularly under the extreme temperature …
Analysis of current capability of SiC power MOSFETs under avalanche conditions
S Nida, B Kakarla, T Ziemann… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The phenomenon of reduced energy capability of power metal-oxide-semiconductor field-
effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV …
effect transistors (MOSFETs) at high avalanche currents is investigated in commercial 1.2-kV …
Robustness of SiC MOSFET under avalanche conditions
I Dchar, M Zolkos, C Buttay… - 2017 IEEE Applied Power …, 2017 - ieeexplore.ieee.org
In high voltage direct current (HVDC) converters, a series connection of semiconductor
devices is often used to achieve the desired blocking voltage. In such configuration, an …
devices is often used to achieve the desired blocking voltage. In such configuration, an …
Performance of wide-bandgap discrete and module cascodes at sub-1 kV: GaN vs. SiC
Wide-bandgap (WBG) based cascode devices combine the advantages of the gate
driveability and reliability of silicon MOSFETs with the power conversion efficiency and …
driveability and reliability of silicon MOSFETs with the power conversion efficiency and …
[HTML][HTML] A Behavior Model of SiC DMOSFET Considering Thermal-Runaway Failures in Short-Circuit and Avalanche Breakdown Faults
Accurate fault simulation and failure prediction have long been challenges for SiC MOSFETs
users. This paper presents a behavior model of Silicon Carbide (SiC) double-implanted …
users. This paper presents a behavior model of Silicon Carbide (SiC) double-implanted …