Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices
L Sang - Functional Diamond, 2022 - Taylor & Francis
With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …
converters, the heat dissipation in the devices becomes the key issue toward the real …
Progress in wafer bonding technology towards MEMS, high-power electronics, optoelectronics, and optofluidics
Wafer bonding is an attractive technology that can join homo/heterogeneous materials into
one composite. It has a wide range of applications in the micro-electro-mechanical system …
one composite. It has a wide range of applications in the micro-electro-mechanical system …
Investigation of bonding mechanism for low-temperature CuCu bonding with passivation layer
ZJ Hong, D Liu, HW Hu, CI Cho, MW Weng, JH Liu… - Applied Surface …, 2022 - Elsevier
The bonding mechanism of low-temperature Cusingle bondCu thermal compression
bonding (TCB) with passivation layer has been investigated in this research. After the …
bonding (TCB) with passivation layer has been investigated in this research. After the …
Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices
Fabrication of GaN-on-diamond structure by bonding technology is becoming more and
more attractive for high-power GaN devices. However, researches on low temperature …
more attractive for high-power GaN devices. However, researches on low temperature …
Low-temperature hybrid bonding with high electromigration resistance scheme for application on heterogeneous integration
ZJ Hong, D Liu, HW Hu, CK Hsiung, CI Cho… - Applied Surface …, 2023 - Elsevier
The novel low-temperature Cu/SiO 2 hybrid bonding scheme using cluster-Ag passivation
has been proposed in this study for the heterogeneous integration application. With the …
has been proposed in this study for the heterogeneous integration application. With the …
Ru Passivation Layer Enables Cu–Cu Direct Bonding at Low Temperatures with Oxidation Inhibition
Stacking semiconductor chips allows for increased packing density within a given footprint
and efficient communication between different functional layers of the chip, leading to higher …
and efficient communication between different functional layers of the chip, leading to higher …
Low-Temperature Co-hydroxylated Cu/SiO2 Hybrid Bonding Strategy for a Memory-Centric Chip Architecture
Cu/SiO2 hybrid bonding with planarized dielectric and isolated metal connections can
realize ultradense interconnects (eg,≤ 1 μm) by eliminating the microbumps and underfill …
realize ultradense interconnects (eg,≤ 1 μm) by eliminating the microbumps and underfill …
Anti-oxidant copper layer by remote mode N2 plasma for low temperature copper–copper bonding
H Park, H Seo, SE Kim - Scientific reports, 2020 - nature.com
An anti-oxidant Cu layer was achieved by remote mode N2 plasma. Remote mode plasma
treatment offers the advantages of having no defect formation, such as pinholes, by …
treatment offers the advantages of having no defect formation, such as pinholes, by …
Advanced Cu/Polymer Hybrid Bonding System for Fine‐Pitch 3D Stacking Devices
Hybrid bonding enables the commercialization of ultra‐fine pitch high‐density 3D packages.
Cu/SiO2 hybrid bonding is the standard packing interface recently introduced in the industry …
Cu/SiO2 hybrid bonding is the standard packing interface recently introduced in the industry …
Advanced 3D Through-Si-Via and Solder Bumping Technology: A Review
YJ Jang, A Sharma, JP Jung - Materials, 2023 - mdpi.com
Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …