Thermal GeO 2 oxides up to 136 nm thickness were produced by annealing Ge wafers in
pure oxygen at 550 C and 270 kPa pressure for up to 10 h. The oxidation kinetics followed …

The dielectric function of bulk Ge is determined between 0.5 and 6.3 eV in a temperature
range of 10–738 K using spectroscopic ellipsometry. The authors provide the data in a …

Transient dielectric functions with a 120 fs time resolution of Ge, Si, and InP were acquired
from 1.7 to 3.5 eV with a femtosecond pump-probe rotating-compensator ellipsometer. The …

Epitaxial layers of Ge 1− x Sn x with Sn compositions up to 18.5% were grown on Ge (100)
substrates via solid-source molecular beam epitaxy. Crystallographic information was …

The temperature dependence of the complex dielectric function ϵ 1+ i ϵ 2 of bulk Ge near
the direct bandgap was investigated with spectroscopic ellipsometry at temperatures …

Herein, the complex pseudodielectric function of Ge and Si from femtosecond pump–probe
spectroscopic ellipsometry with 267, 400, and 800 nm pump–pulse wavelengths is analyzed …

Heteroepitaxy of planar, low-defect III-V semiconductor layers on Ge (100) requires a single-
domain substrate surface, where dimer rows are aligned in parallel on atomically well …

The authors report the compositional dependence of the direct and indirect band gaps of
pseudomorphic Ge 1− x− y Si x Sn y alloys on Ge and GaAs with (001) surface orientation …

For vertical-cavity surface-emitting lasers (VCSELs) or photoelectrochemical devices and
high efficient III-V/Ge (100) photovoltaics, preparation of double-atomic steps on Ge (100) …

Faddeeva/Voigt broadening of dielectric functions (DFs) couples the physical properties of
mutual Lorentzian and Gaussian broadening as a combined unit. This work investigates …