Mixed-Dimensional Integration of 3D-on-2D Heterostructures for Advanced Electronics

S Lee, MK Song, X Zhang, JM Suh, JE Ryu, J Kim - Nano Letters, 2024 - ACS Publications
Two-dimensional (2D) materials have garnered significant attention due to their exceptional
properties requisite for next-generation electronics, including ultrahigh carrier mobility …

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

J Chen, MY Sun, ZH Wang, Z Zhang, K Zhang… - Nano-Micro Letters, 2024 - Springer
Abstract Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-
scale manipulation, challenging the conventional limitations of semiconductor materials …

Highly Efficient Electrode of Dirac Semimetal PtTe2 for MoS2-Based Field Effect Transistors

J Ren, L Wang, Q Yao, L Zhang, G Dong… - … Applied Materials & …, 2024 - ACS Publications
Two-dimensional van der Waals (vdW) layered materials not only are an intriguing
fundamental scientific research platform but also provide various applications to …

Band offset analysis at two-dimensional molybdenum disulfide/boron nitride heterointerface for non-volatile memory applications

HE Dang, MJ Kim, TI Kim, IJ Park - Journal of Alloys and Compounds, 2024 - Elsevier
Van der Waals nanomaterials have been regarded as promising candidates with
outstanding electrical and optoelectronic properties for advanced semiconductor and …

P-type Schottky-barrier-free contact to via layer-number-assisted interface engineering

XL Zhao, NW Wang, YJ Zhang, YM Gao, PL Gong… - Physical Review …, 2024 - APS
Bilayer and few-layer Mo S 2 show intrinsically higher electronic quality and substantially
improved device performance than monolayer, and high-quality Mo S 2 wafers with …