Developments in IC fabrication, emerging high-reliability markets, and government
regulations indicate potential for significant shifts in how reliability fits within IC development …

This paper presents a unified two-dimensional (2D) threshold voltage model for lightly
doped symmetrical double-gate p-channel MOSFETs including quantum confinement effects …

This paper deals with the implementation of a DC and AC double-gate MOSFET compact
model in the Verilog-AMS language for the transient simulation and the configuration of ultra …

With the rapid development of semiconductor technology, chip integration is getting beyond
imagination. Aging has become one of the main threats to circuit reliability. In order to …

Abstract Gate-all-around (GAA)-based field effect transistors (FETs) are considered to be
one of the dominant structures that overcome the performance degradation problems that …

In this paper, the gate-to-channel capacitance variation for the tri-gate nanowire junctionless
transistor (JLT) has been analyzed. It is based on the 2-D electrostatic numerical simulation …

This paper presents a simple analytical reliability model for potential and threshold voltage
when negative bias temperature instability (NBTI) and hot carrier degradation (HCD) are …

The downscaling of MOSFET devices leads to well-studied short channel effects and more
complex quantum mechanical effects. Both quantum and short channel effects not only alter …