As the size of semiconductor devices continues to shrink, the normally random distribution of
the individual dopant atoms within the semiconductor becomes a critical factor in …

This paper, for the first time, estimates the influences of the intrinsic-parameter fluctuations
consisting of metal-gate work-function fluctuation (WKF), process-variation effect (PVE), and …

The impact of the number and position of discrete dopants on device characteristics is
crucial in determining the transient behavior of nanoscale circuits. An experimentally …

The eight-band k· p formalism has been successfully applied to compute the electronic
properties of a wide range of semiconductor nanostructures in the past and can be …

An effective doping technology for the precise control of P atom injection and activation into
a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular …

Using an advanced simulation framework we analyze a recent sub-10 nm technology
demonstration based on stacked nanowire transistors (NW-FETs). The study encompasses …

The impact of the number and position of discrete dopants on device characteristics is
crucial in determining the behavior of nanoscale semiconductor devices. This study explores …

A new theoretical framework for the nonequilibrium Green's function (NEGF) scheme is
presented to account for the discrete nature of impurities doped in semiconductors. Since …

This paper overviews the fundamental problems encountered in device modeling and
simulations of sub-10 nm Si metal-oxide-semiconductor field-effect-transistors (MOSFETs) …

High-κ/metal-gate and vertical channel transistors are well-known solutions to continue the
device scaling. This work extensively explores the physics and mechanism of the intrinsic …