Two fundamental challenges of line edge roughness (LER) metrology are to provide
complete and accurate measurement of LER. We focus on recent advances concerning both …

For the most advanced nodes, edge placement errors are typically dominated by
stochastics, necessitating a rigorous stochastics approach to modeling and measuring edge …

Using environmentally controlled, high-speed atomic force microscopy (AFM), we examine
dynamic fluctuations of topographically confined poly (styrene-block-methyl …

The magnitudes of the challenges facing electron-based metrology for post-CMOS
technology are reviewed. Directed self-assembly, nanophotonics/plasmonics, and resistive …

Detecting the inner structures in the perpendicularly orientated block copolymer (BCP) films
is beneficial to understand the in-depth arrangement of nano-domains. This study presents a …

We investigate the effects of Line Edge Roughness (LER) of electrode lines on the uniformity
of Resistive Random Access Memory (ReRAM) device areas in cross-point architectures. To …

The aim of this paper is to investigate the role of etch transfer in two challenges of LER
metrology raised by recent evolutions in lithography: the effects of SEM noise and the cross …

La détermination de la rugosité sub-nanométrique sur les flancs des motifs, dont les
dimensions critiques atteignent une taille inférieure à 10nm, devient une étape primordiale …

Dans le contexte d'une miniaturisation des circuits imprimés dans l'industrie de la
microélectronique, la lithographie 193 nm à immersion atteint aujourd'hui ses limites de …

The aim of this work is to clarify the quantitative relationship between the Edge Placement
Error (EPE) and Line Edge Roughness (LER) in a rough pattern. Using a computational …