Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Surface functionalisation of diamond can produce negative electron affinity (NEA), where the
conduction band lies higher in energy than the vacuum level. Hydrogen termination is well …

SThe present paper investigates the nanoscale thermal transport at diamond/copper (dCu)
interfaces using the density functional theory (DFT) and the atomistic Green's function …

Secondary electron emission materials are reviewed with the aim of providing guidelines for
the future development of novel transmission dynodes. Materials with reflection secondary …

Secondary electron emission serves as the foundation for a broad range of vacuum
electronic devices and instrumentation, from particle detectors and multipliers to high-power …

Negative electron affinity (NEA) or low-work function conditions of wide-band gap materials
play a crucial role in developing effective electron-emission devices, field-effect transistors …

Boron-terminated bare and oxidized diamond (001) surfaces are first proposed in this paper
and are modelled by adsorbing the boron (B) atoms onto the bare and oxidized diamond …

Sub-monolayers of titanium were deposited onto oxidised (100) single-crystal diamond
surfaces and annealed in vacuo at temperatures up to 1000° C to find a temperature-stable …

Wide-bandgap semiconductors are exploited in several technological fields such as electron
emission devices, energy conversion, high-power high-temperature electronics, and …

Monolayer cubic boron (B) nitride (N) terminated diamond (111) surfaces are proposed and
investigated using density functional theory. The carbon (C)–N–B-terminated diamond (111) …