While non-nitride III-V semiconductors typically have a zinc-blende structure, they may also
form wurtzite crystals under pressure or when grown as nanowhiskers. This makes …

We study a one-dimensional (iso) spin 1/2 Bose gas with repulsive δ-function interaction by
the Bethe Ansatz method and discuss the excitations above the polarized ground state. In …

We demonstrate the top-down fabrication of ordered arrays of GaN nanowires by selective
area sublimation of pre-patterned GaN (0001) layers grown by hydride vapor phase epitaxy …

We have studied the influence of Group V overpressure on the final shape and size of InAs
nanostructures grown on (001) InP substrates. The mechanisms leading to postgrowth …

The exciton properties of self-assembled rectangular and V-shaped quantum wires are
investigated theoretically in the presence of a magnetic field. The calculations are done in …

Thin film coatings have the potential to increase both the thermal efficiency and accelerating
gradient in superconducting radio frequency accelerator cavities. However, before this …

Recent advances in thin-film-magnet and Bi-YIG film technologies have opened up the
possibility of fabricating very compact magnetooptic structures. It is demonstrated for the first …

In this work, we propose an efficient method to investigate optical properties as well as their
dependence on geometrical parameters in InAs/InAlAs quantum wires. The used method is …

We report here in situ measurements of stress evolution during molecular beam epitaxy
growth of InAs/InP (001) quantum wires. The obtained results provide the necessary …

We report the direct deposition of indium antimonide, by molecular beam epitaxy (MBE) on
gallium antimonide, resulting in the formation of quantum dots (QDs) with a maximum …