Atomically resolved defect-engineering scattering potential in 2D semiconductors
Engineering atomic-scale defects has become an important strategy for the future
application of transition metal dichalcogenide (TMD) materials in next-generation electronic …
application of transition metal dichalcogenide (TMD) materials in next-generation electronic …
Strongly Enhanced Electronic Bandstructure Renormalization by Light in Nanoscale Strained Regions of Monolayer MoS2/Au(111) Heterostructures
Understanding and controlling the photoexcited quasiparticle (QP) dynamics in monolayer
(ML) transition metal dichalcogenides (TMDs) lays the foundation for exploring the strongly …
(ML) transition metal dichalcogenides (TMDs) lays the foundation for exploring the strongly …
Strain-induced superstructure evolution and Te vacancy accumulation in AgTe monolayer grown on Ag (111) substrate
G Niu, X Geng, J Lu, J Geng, S Li, Y Zhang, B Fu… - Vacuum, 2024 - Elsevier
Abstract Two-dimensional (2D) materials have attracted increasing attention for frontier
science and industrial applications in the past few decades. As a 2D materials with …
science and industrial applications in the past few decades. As a 2D materials with …
[PDF][PDF] Quantum Quasiparticle Interference Technique and Its Studies in Atomically Thin Semiconductors
HY Chen, HC Hsu, JY Liang, BH Wu, YF Chen… - conf.tw
Quantum Quasiparticle interference (QPI) has been observed and proven particularly
beneficial for exploring the dispersion relation of electronic band structures in various …
beneficial for exploring the dispersion relation of electronic band structures in various …