The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

Semiconductor electronics is commonplace in every household. Semiconductor devices
have enabled economically reasonable fiber-based optical communication, optical storage …

In this contribution we review the impact of anionic and cationic substitutions on the
electronic properties of bulk ZnO crystals, thin films and ZnO powders. p-type doping is …

ZnO single crystals, epilayers, and nanostructures often exhibit a variety of narrow emission
lines in the spectral range between 3.33 and 3.35 eV which are commonly attributed to …

The authors report growth of stable Na-doped p-type ZnO films through pulsed laser
deposition. Magnetic field dependent Hall-effect measurements demonstrate the firm p-type …

Bipolar (n-and p-type) electric conductivity control is at the heart of semiconductor
technologies. However, achieving such control in ultrawide-band-gap semiconductors has …

p-Type ZnO microwires were first synthesized by a simple chemical vapor deposition
method using Na as the dopant source. p-Type doping was confirmed by the electrical …

Controlling the polarity of ZnO nanowires in addition to the uniformity of their structural
morphology in terms of position, vertical alignment, length, diameter, and period is still a …

Holding promising applications in power electronics, the ultra-wide band gap material
gallium oxide has emerged as a vital alternative to materials like GaN and SiC. The detailed …

This book discusses various aspects of different bulk TSO single crystals in terms of
thermodynamics; bulk crystal growth using diverse techniques involving gas phase, solution …