Investigating the effects of thickness on the performance of ZnO-based DSSC
E Kouhestanian, M Ranjbar, SA Mozaffari… - Progress in Color …, 2021 - pccc.icrc.ac.ir
Zinc oxide nanostructures exhibit unique properties which make them suitable for dye-
sensitized solar cell applications. Their specific properties such as appropriate optical …
sensitized solar cell applications. Their specific properties such as appropriate optical …
The effect of light-scattering layer on the performance of dye-sensitized solar cell assembled using TiO2 double-layered films as photoanodes
L Zhu, YL Zhao, XP Lin, XQ Gu, YH Qiang - Superlattices and …, 2014 - Elsevier
Dye-sensitized solar cells (DSSCs) are fabricated based on double-layered films of TiO 2
nanospheres and TiO 2 nanorod arrays (NRAs). TiO 2 nanospheres, including TiO 2 hollow …
nanospheres and TiO 2 nanorod arrays (NRAs). TiO 2 nanospheres, including TiO 2 hollow …
Sonochemical synthesis and characterization of a Zn (II) supramolecule, bis (2, 6 diaminopyridinium) bis (pyridine-2, 6-dicarboxylato) zincate (II), as a novel precursor …
M Ranjbar, SA Mozaffari, E Kouhestanian… - … of Photochemistry and …, 2016 - Elsevier
Synthesis of Zn (II) supramolecules as precursors for the fabrication of the zinc oxide
nanostructures is an important issue in nanomaterials research. In the present study, the Zn …
nanostructures is an important issue in nanomaterials research. In the present study, the Zn …
Analysis of in situ thin films epitaxy by reflectance spectroscopy: effect of growth parameters
I Massoudi, A Rebey - Superlattices and Microstructures, 2019 - Elsevier
In the current work, we provide a theoretical analysis of reflectance spectroscopy response
during the heteroepitaxy of thin films. UV–Vis–NIR energy range is explored for the control of …
during the heteroepitaxy of thin films. UV–Vis–NIR energy range is explored for the control of …
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
Optical and structural properties in high-x In x Ga 1-x As (x> 0.65) samples with varying
indium concentration grown on InP (1 0 0) substrate are reported. By increasing the indium …
indium concentration grown on InP (1 0 0) substrate are reported. By increasing the indium …
Optical properties study of InxGa1− xAs/GaAs structures using spectral reflectance, photoreflectance and near-infrared photoluminescence
MM Habchi, M Bedoui, N Tounsi, I Zaied… - Superlattices and …, 2014 - Elsevier
Optical properties of In x Ga 1− x As films grown on GaAs substrates by metalorganic vapor
phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at …
phase epitaxy were investigated. Spectral reflectance (SR) and photoreflectance (PR) at …
Structure optimization of high indium content InGaAs/InP heterostructure for the growth of In0.82Ga0.18As buffer layer
Q Wei, Z Guo, L Zhao, L Zhao, D Yuan, G Miao… - Optoelectronics …, 2016 - Springer
Microstructure and misfit dislocation behavior in In x Ga 1-x As/InP heteroepitaxial materials
grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were …
grown by low pressure metal organic chemical vapor deposition (LP-MOCVD) were …
The influence of In composition on properties of InxGa1-xAs/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance
Abstract Series of In x Ga 1-x As/GaAs structures with indium vapor composition ranging
from 13 to 100%, denoted samples A, B, C and D, were grown by metalorganic vapor phase …
from 13 to 100%, denoted samples A, B, C and D, were grown by metalorganic vapor phase …
[HTML][HTML] Effects of In0.82Ga0.18As/InP Double Buffers Design on the Microstructure of the In0.82G0.18As/InP Heterostructure
L Zhao, Z Guo, X Ding, J Li, S Yang, M Zhang, L Zhao - Crystals, 2017 - mdpi.com
In order to reduce the dislocation density and improve the performance of high indium
content In0. 82Ga0. 18As films, the design of double buffer layers has been introduced into …
content In0. 82Ga0. 18As films, the design of double buffer layers has been introduced into …
TEM study of dislocations structure in In0.82Ga0.18As/InP heterostructure with InGaAs as buffer layer
L Zhao, Z Guo, D Yuan, Q Wei, L Zhao - Optoelectronics Letters, 2016 - Springer
In order to improve the quality of detector, In x Ga 1− x As (x= 0.82) buffer layer has been
introduced in In 0.82 Ga 0.18 As/InP heterostructure. Dislocation behavior of the multilayer is …
introduced in In 0.82 Ga 0.18 As/InP heterostructure. Dislocation behavior of the multilayer is …