Ge (001) surface cleaning methods for device integration

P Ponath, AB Posadas, AA Demkov - Applied Physics Reviews, 2017 - pubs.aip.org
Germanium (Ge), with its higher hole and electron mobility than silicon, is a promising
candidate to replace silicon for future complementary metal-oxide-semiconductor (CMOS) …

Residual metallic contamination of transferred chemical vapor deposited graphene

G Lupina, J Kitzmann, I Costina, M Lukosius… - ACS …, 2015 - ACS Publications
Integration of graphene with Si microelectronics is very appealing by offering a potentially
broad range of new functionalities. New materials to be integrated with the Si platform must …

Product design of cohesive powders–mechanical properties, compression and flow behavior

J Tomas - … & Technology: Industrial Chemistry‐Plant Equipment …, 2004 - Wiley Online Library
The fundamentals of cohesive powder consolidation and flow behavior are explained using
a reasonable combination of particle and continuum mechanics. By the model “stiff particles …

[图书][B] Mesoscopic electronics in solid state nanostructures

T Heinzel - 2008 - books.google.com
This text treats electronic transport in the regime where conventional textbook models are no
longer applicable, including the effect of electronic phase coherence, energy quantization …

Mechanics of nanoparticle adhesion–a continuum approach

J Tomas - Particles on surfaces, 2003 - books.google.com
The fundamentals of particle-particle adhesion are presented using continuum mechanics
approaches. The models for elastic (Hertz, Huber, Cattaneo, Mindlin and Deresiewicz) …

Wet-chemical passivation of Si (111)-and Si (100)-substrates

H Angermann, W Henrion, A Röseler… - Materials Science and …, 2000 - Elsevier
The influence of preparation-induced surface roughness, as well as the hydrogen and oxide
coverage on electronic properties of Si (111) and Si (100) surfaces was investigated by …

Wet-chemical passivation of atomically flat and structured silicon substrates for solar cell application

H Angermann, J Rappich, L Korte, I Sieber… - Applied Surface …, 2008 - Elsevier
Special sequences of wet-chemical oxidation and etching steps were optimised with respect
to the etching behaviour of differently oriented silicon to prepare very smooth silicon …

Assessment of wafer‐level transfer techniques of graphene with respect to semiconductor industry requirements

S Wittmann, S Pindl, S Sawallich… - Advanced Materials …, 2023 - Wiley Online Library
Graphene is a promising candidate for future electronic applications. Manufacturing
graphene‐based electronic devices typically requires graphene transfer from its growth …

The worst ill-conditioned silicon wafer slicing machine detected by using grey relational analysis

CT Lin, CW Chang, CB Chen - The International Journal of Advanced …, 2006 - Springer
In the silicon slicing process, machine vibrations and the unstable wire knife motion cause
the slicing precision to drift, or other ill-conditions. This process involves several …

Toward an Improved Method for Determining the Hamaker Constant of Solid Materials Using Atomic Force Microscopy. II. Dynamic Analysis and Preliminary …

MC Stevenson, SP Beaudoin… - The Journal of Physical …, 2021 - ACS Publications
The further development of an existing approach-to-contact atomic force microscopy (AFM)
method for determining the Hamaker constant, A, of a solid nondeformable material is …