In-Depth Physical Mechanism Analysis and Wearable Applications of HfOx-Based Flexible Memristors

S Zhu, B Sun, G Zhou, T Guo, C Ke… - … Applied Materials & …, 2023 - ACS Publications
Since memristors as an emerging nonlinear electronic component have been considered
the most promising candidate for integrating nonvolatile memory and advanced computing …

P-type polar transition of chemically doped multilayer MoS2 transistor

X Liu, D Qu, J Ryu, F Ahmed, Z Yang, D Lee… - arXiv preprint arXiv …, 2015 - arxiv.org
The accessibility of both n-type and p-type MoS2 FET is necessary for complementary
device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning …

Modulation of Quantum Tunneling via a Vertical Two-Dimensional Black Phosphorus and Molybdenum Disulfide p–n Junction

X Liu, D Qu, HM Li, I Moon, F Ahmed, C Kim, M Lee… - ACS …, 2017 - ACS Publications
Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus
(BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward …

A review of thermal rectification in solid-state devices

FK Malik, K Fobelets - Journal of Semiconductors, 2022 - iopscience.iop.org
Thermal rectification, or the asymmetric transport of heat along a structure, has recently been
investigated as a potential solution to the thermal management issues that accompany the …

Anisotropic thermal transport in bulk hexagonal boron nitride

P Jiang, X Qian, R Yang, L Lindsay - Physical review materials, 2018 - APS
Hexagonal boron nitride (h-BN) has received great interest in recent years as a wide band-
gap analog of graphene-derived systems along with its potential in a wide range of …

Progress in THz rectifier technology: Research and perspectives

R Citroni, F Di Paolo, P Livreri - Nanomaterials, 2022 - mdpi.com
Schottky diode (SD) has seen great improvements in the past few decades and, for many
THz applications, it is the most useful device. However, the use and recycling of forms of …

Fully dry PMMA transfer of graphene on h-BN using a heating/cooling system

T Uwanno, Y Hattori, T Taniguchi, K Watanabe… - 2D …, 2015 - iopscience.iop.org
The key to achieve high-quality van der Waals heterostructure devices made of stacking
various two-dimensional (2D) layered materials lies in the clean interface without bubbles …

Manipulating charge and energy transfer between 2D atomic layers via heterostructure engineering

X Liu, J Pei, Z Hu, W Zhao, S Liu, MR Amara… - Nano Letters, 2020 - ACS Publications
Two-dimensional (2D) van der Waals heterostructures have attracted enormous research
interests due to their emergent electrical and optical properties. The comprehensive …

High performance complementary WS 2 devices with hybrid Gr/Ni contacts

MF Khan, F Ahmed, S Rehman, I Akhtar, MA Rehman… - Nanoscale, 2020 - pubs.rsc.org
Two-dimensional (2D) transition metal dichalcogenides have attracted vibrant interest for
future solid-state device applications due to their unique properties. However, it is …

Multifunctional tunneling devices based on graphene/h-BN/MoSe2 van der Waals heterostructures

R Cheng, F Wang, L Yin, K Xu, T Ahmed Shifa… - Applied Physics …, 2017 - pubs.aip.org
The vertically stacked devices based on van der Waals heterostructures (vdWHs) of two-
dimensional layered materials (2DLMs) have attracted considerable attention due to their …