The accessibility of both n-type and p-type MoS2 FET is necessary for complementary device applications involving MoS2. However, MoS2 PFET is rarely achieved due to pinning …
Diverse diode characteristics were observed in two-dimensional (2D) black phosphorus (BP) and molybdenum disulfide (MoS2) heterojunctions. The characteristics of a backward …
FK Malik, K Fobelets - Journal of Semiconductors, 2022 - iopscience.iop.org
Thermal rectification, or the asymmetric transport of heat along a structure, has recently been investigated as a potential solution to the thermal management issues that accompany the …
Hexagonal boron nitride (h-BN) has received great interest in recent years as a wide band- gap analog of graphene-derived systems along with its potential in a wide range of …
R Citroni, F Di Paolo, P Livreri - Nanomaterials, 2022 - mdpi.com
Schottky diode (SD) has seen great improvements in the past few decades and, for many THz applications, it is the most useful device. However, the use and recycling of forms of …
The key to achieve high-quality van der Waals heterostructure devices made of stacking various two-dimensional (2D) layered materials lies in the clean interface without bubbles …
Two-dimensional (2D) van der Waals heterostructures have attracted enormous research interests due to their emergent electrical and optical properties. The comprehensive …
Two-dimensional (2D) transition metal dichalcogenides have attracted vibrant interest for future solid-state device applications due to their unique properties. However, it is …
The vertically stacked devices based on van der Waals heterostructures (vdWHs) of two- dimensional layered materials (2DLMs) have attracted considerable attention due to their …