Emerging programs in a new field of technology that employs quantum mechanical
principles in engineered devices has driven new approaches to atomic-scale fabrication. Of …

The readout of semiconductor spin qubits based on spin blockade is fast but suffers from a
small charge signal. Previous work suggested large benefits from additional charge …

Individual donors in silicon chips are used as quantum bits with extremely low error rates.
However, physical realizations have been limited to one donor because their atomic size …

Scaling up to large arrays of donor-based spin qubits for quantum computation will require
the ability to perform high-fidelity readout of multiple individual spin qubits. Recent …

We use a cryogenic high-electron-mobility transistor circuit to amplify the current from a
single electron transistor, allowing for demonstration of single shot readout of an electron …

Spin-qubits based on impurities such as phosphorus in silicon (Si) have attractive attributes
for the development of quantum computing devices. Very long coherence times can be …

In spin-based quantum-information-processing devices, the presence of control and
detection circuitry can change the local environment of a spin by introducing strain and …

We examine a silicon-germanium heterojunction bipolar transistor (HBT) for cryogenic pre-
amplification of a single electron transistor (SET). The SET current modulates the base …

We analyze the electron spin relaxation rate 1/T 1 of individual ion-implanted P 31 donors in
a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of …

We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a
single polysilicon gate stack. The elementary structure consists of two enhancement gates …