Effective Work Functions of the Elements: Database, Most probable value, Previously recommended value, Polycrystalline thermionic contrast, Change at critical …

H Kawano - Progress in surface science, 2022 - Elsevier
As a much-enriched supplement to the previous review paper entitled the “Effective work
functions for ionic and electronic emissions from mono-and polycrystalline surfaces”[Prog …

The structure and properties of metal-semiconductor interfaces

LJ Brillson - Surface Science Reports, 1982 - Elsevier
In this review, we examine the contributions of surface science research to the
understanding of metal-semiconductor interfaces. In particular, we survey conventional …

Physics and electronics of the noble-metal/elemental-semiconductor interface formation: A status report

G Le Lay - Surface Science, 1983 - Elsevier
The object of this report is to given a systematic overview of the characteristics of the
formation of the noble-metal/elemental-semiconductor interface. The growth mechanisms …

[图书][B] High-temperature superconductivity

VL Ginzburg, DA Kirzhnits, AK Agyei, JL Birman - 1982 - Springer
I first learned of the existence of this book on high-temperature superconduc tivity when I
received a copy in the office of one of the co-editors, Prof. VL Ginzburg, shortly after …

Solar energy conversion: solid-state physics aspects

BO Seraphin - Solar Energy Conversion: Solid-state Physics …, 1979 - ui.adsabs.harvard.edu
Solid-state aspects of solar energy conversion systems are discussed, with attention given to
spectrally selective surfaces, carrier lifetimes in silicon, solar photoelectrolysis with …

Structures and electronic transport on silicon surfaces

S Hasegawa, X Tong, S Takeda, N Sato… - Progress in Surface …, 1999 - Elsevier
By utilizing a variety of surface superstructures formed on silicon surfaces and atomic layers
grown on them, close correlations between the atomic-scale structures and electrical …

Dependence of residual damage on temperature during Ar+ sputter cleaning of silicon

JC Bean, GE Becker, PM Petroff… - Journal of Applied Physics, 1977 - pubs.aip.org
It has been found that the kind and amount of damage produced in silicon following Ar+ ion
bombardment at 1.0 keV and the annealing properties of the damage depend strongly on …

Electronic properties, structure and temperature-dependent composition of nickel deposited on rutile titanium dioxide (110) surfaces

CC Kao, SC Tsai, MK Bahl, YW Chung, WJ Lo - Surface Science, 1980 - Elsevier
Ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS),
Auger electron spectroscopy (AES) and low energy electron diffraction (LEED) have been …

Unoccupied surface states revealing the Si(111)√3 √3 -Al, -Ga, and -In adatom geometries

JM Nicholls, B Reihl, JE Northrup - Physical Review B, 1987 - APS
Abstract k-resolved inverse-photoemission spectroscopy has been used to determine the
empty surface-state band structures of Si (111)√ 3×√ 3-Al,-Ga, and-In surfaces. The results …

Total-energy calculations of semiconductor surface reconstructions

JP LaFemina - Surface science reports, 1992 - Elsevier
In this article, the current understanding of semiconductor surface reconstructions and the
role of total-energy calculations in achieving this understanding is reviewed. The methods …