The ever increasing requirements for electrical performance of on-chip wiring has driven
three major technological advances in recent years. First, copper has replaced Aluminum as …

Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

This paper presents an in-depth overview of the present status and novel developments in
the field of plasma processing of low dielectric constant (low-k) materials developed for …

Encapsulation of organic (opto-) electronic devices, such as organic light-emitting diodes
(OLEDs), photovoltaic cells, and field-effect transistors, is required to minimize device …

The review article provides an overview of the most important and popular techniques for
evaluating the porosity of thin films developed for various applications. These methods …

Fourier transform infrared (FTIR) analyses of low-k materials exposed to either oxygen
radicals or to capacitively coupled O 2 plasma indicate that carbon depletion from these …

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta (N)
films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects …

Organosilicate-glass films with a varying ratio of terminal methyl and bridging ethylene
groups are synthesized using 1, 2-bis (trimethoxysilyl) ethane/methyltrimethoxysilane …

As an extension of spectral ellipsometry, ellipsometric porosimetry has gained considerable
importance for the characterization of porous thin films. The in-situ measurement of sorption …

CoTa alloy films as diffusion barriers for Cu/low-k interconnects are studied. Crystalline
structure, thermal stability, barrier and sealing properties on low-k dielectric of CoTa alloys …