Electrostatic pull-in instability in MEMS/NEMS: A review

WM Zhang, H Yan, ZK Peng, G Meng - Sensors and Actuators A: Physical, 2014 - Elsevier
Pull-in instability as an inherently nonlinear and crucial effect continues to become
increasingly important for the design of electrostatic MEMS and NEMS devices and ever …

Dynamics of 2D material membranes

PG Steeneken, RJ Dolleman, D Davidovikj… - 2D …, 2021 - iopscience.iop.org
The dynamics of suspended two-dimensional (2D) materials has received increasing
attention during the last decade, yielding new techniques to study and interpret the physics …

Capacitive RF MEMS switch dielectric charging and reliability: a critical review with recommendations

WM Van Spengen - Journal of Micromechanics and …, 2012 - iopscience.iop.org
This paper presents a comprehensive review of the reliability issues hampering capacitive
RF MEMS switches in their development toward commercialization. Dielectric charging and …

Research and analysis of MEMS switches in different frequency bands

W Tian, P Li, LX Yuan - Micromachines, 2018 - mdpi.com
Due to their high isolation, low insertion loss, high linearity, and low power consumption,
microelectromechanical systems (MEMS) switches have drawn much attention from …

Review of device and reliability physics of dielectrics in electrostatically driven MEMS devices

WA de Groot, JR Webster, D Felnhofer… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
After decades of improving semiconductor-device reliability, dielectric failure rates resulting
from surface-charge accumulation, dielectric breakdown, and charge injection have been …

Effect of deposition parameters on surface roughness and consequent electromagnetic performance of capacitive RF MEMS switches: a review

Z Chen, W Tian, X Zhang, Y Wang - Journal of Micromechanics …, 2017 - iopscience.iop.org
Surface roughness seriously affects the electromagnetic performance of capacitive radio
frequency (RF) micro-electromechanical system (MEMS) switches. This review presents the …

RF MEMS Shunt Capacitive Switches Using AlN Compared to Dielectric

MFB Badia, E Buitrago… - Journal of …, 2012 - ieeexplore.ieee.org
RF microelectromechanical systems (MEMS) capacitive switches for two different dielectrics,
aluminum nitride (AlN) and silicon nitride (Si_3N_4), are presented. The switches have been …

A physics-based predictive modeling framework for dielectric charging and creep in RF MEMS capacitive switches and varactors

A Jain, S Palit, MA Alam - Journal of microelectromechanical …, 2011 - ieeexplore.ieee.org
In this paper, we develop a physics-based theoretical modeling framework to predict the
device lifetime defined by the dominant degradation mechanisms of RF …

Model and observations of dielectric charge in thermally oxidized silicon resonators

G Bahl, R Melamud, B Kim… - Journal of …, 2009 - ieeexplore.ieee.org
This paper investigates the effects of dielectric charge on resonant frequency in thermally
oxidized silicon resonators hermetically encapsulated using¿ epi-seal.¿ SiO 2 coatings are …

Challenges and issues of using polymers as structural materials in MEMS: A review

Y Li - Journal of Microelectromechanical Systems, 2018 - ieeexplore.ieee.org
Polymers are ever more widely and more prominently used in microelectromechanical
systems. They provide significant added value to the existing silicon-based technologies …