Spontaneous ordering of nanostructures on crystal surfaces

VA Shchukin, D Bimberg - Reviews of Modern Physics, 1999 - APS
A review is given of theoretical concepts and experimental results on spontaneous formation
of periodically ordered nanometer-scale structures on crystal surfaces. Thermodynamic …

The history and future of semiconductor heterostructures

ZI Alferov - Semiconductors, 1998 - Springer
The history of the development of semiconductor heterostructures and their applications in
various electron devices is presented, along with a brief historical survey of the physics …

[图书][B] Optical properties of semiconductor nanocrystals

SV Gaponenko - 1998 - books.google.com
Low-dimensional semiconductor structures, often referred to as nanocrystals or quantum
dots, exhibit fascinating behavior and have a multitude of potential applications, especially …

Low threshold, large To injection laser emission from (InGa) As quantum dots

N Kirstaedter, NN Ledentsov, M Grundmann… - Electronics Letters, 1994 - elibrary.ru
Low threshold, large To injection laser emission via zero-dimensional states in (InGa) As
quantum dots is demonstrated. The dots are formed due to a morphological transformation …

[PDF][PDF] История и будущее полупроводниковых гетероструктур

ЖИ Алферов - Лекции лауреатов Демидовской премии (1993-2004) …, 2006 - elar.urfu.ru
Сейчас очень трудно представить современную физику твердого тела без
полупроводниковых гетероструктур. Полупроводниковые гетероструктуры и особенно …

Quantum dot heterostructures: fabrication, properties, lasers

NN Ledentsov, VM Ustinov, VA Shchukin, PS Kop'Ev… - Semiconductors, 1998 - Springer
In the present review we summarize original results where 1) we have experimentally
discovered a novel class of spontaneously ordered nanostructures, namely equilibrium …

Direct formation of vertically coupled quantum dots in Stranski-Krastanow growth

NN Ledentsov, VA Shchukin, M Grundmann… - Physical Review B, 1996 - APS
Abstract Alternate short-period GaAs-InAs deposition following InAs pyramid formation on a
GaAs (100) surface leads to the creation of vertically split pyramids. This splitting is driven by …

[PDF][PDF] Гетероструктуры с квантовыми точками: получение, свойства, лазеры

НН Леденцов, ВМ Устинов, ВА Щукин… - Физика и техника …, 1998 - journals.ioffe.ru
Дан обзор оригинальных результатов, в которых: 1) экспериментально открыт новый
класс спонтанно упорядоченных наноструктур—равновесные массивы трехмерных …

[图书][B] Epitaxy of nanostructures

V Shchukin, NN Ledentsov, D Bimberg - 2004 - books.google.com
The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …

Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

ZY Xu, ZD Lu, XP Yang, ZL Yuan, BZ Zheng, JZ Xu… - Physical Review B, 1996 - APS
We have investigated the temperature dependence of photoluminescence (PL) properties of
a number of self-organized InAs/GaAs heterostructures with InAs layer thickness ranging …