RA Claus, PP Naulleau, AR Neureuther, L Waller - Optics express, 2015 - opg.optica.org
We present a general algorithm for combining measurements taken under various illumination and imaging conditions to quantitatively extract the amplitude and phase of an …
While the industrial implementation of extreme ultraviolet lithography for upcoming technology nodes is becoming ever more realistic, a number of challenges have yet to be …
YW Kim, DG Lee, S Moon, CM Ku… - Applied Physics …, 2022 - iopscience.iop.org
Extreme ultraviolet (EUV) lithography is expected to be used for 3 nm technology nodes and beyond, yet the need for actinic mask metrology and inspection remains a critical challenge …
For the successful implementation of extreme ultraviolet (EUV) lithography in the upcoming technology nodes, a major challenge to overcome is the stable and reliable detection and …
KA Goldberg, MP Benk, A Wojdyla… - … EUV) Lithography V, 2014 - spiedigitallibrary.org
The SEMATECH High Numerical Aperture Actinic Reticle Review Project (SHARP) is a synchrotron-based extreme ultraviolet (EUV) microscope dedicated to photomask research …
A Wojdyla, MP Benk, PP Naulleau… - … , and Applications V, 2018 - spiedigitallibrary.org
Fourier ptychography is a computational imaging techniques that combines various full-field coherent images acquired under varied illumination angles and combined to yield a angular …
We demonstrate a method for characterizing the field-dependent aberrations of a full-field synchrotron-based extreme ultraviolet microscope. The statistical uniformity of the inherent …
KA Goldberg, MP Benk, A Wojdyla… - Extreme Ultraviolet …, 2015 - spiedigitallibrary.org
Extreme ultraviolet (EUV) microscopy is invaluable for the development of EUV photomasks, providing detailed information for the creation of new mask processes, and reliable feedback …