Role of surface energy in nanowire growth
As research interest moves from micromaterials to nanomaterials and quantum structures,
the surface energy of the structures has an increasing impact on the nanomaterial growth …
the surface energy of the structures has an increasing impact on the nanomaterial growth …
Nanowires bending over backward from strain partitioning in asymmetric core–shell heterostructures
The flexibility and quasi-one-dimensional nature of nanowires offer wide-ranging
possibilities for novel heterostructure design and strain engineering. In this work, we realize …
possibilities for novel heterostructure design and strain engineering. In this work, we realize …
Self-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces
Y Liu, JV Knutsson, N Wilson, E Young… - Nature …, 2021 - nature.com
Scaling down material synthesis to crystalline structures only few atoms in size and precisely
positioned in device configurations remains highly challenging, but is crucial for new …
positioned in device configurations remains highly challenging, but is crucial for new …
Growth selectivity control of InAs shells on crystal phase engineered GaAs nanowires
In this work we demonstrate a two-fold selectivity control of InAs shells grown on crystal
phase and morphology engineered GaAs nanowire (NW) core templates. This selectivity …
phase and morphology engineered GaAs nanowire (NW) core templates. This selectivity …
Bismuth mediated tuning of electronic structure and enhanced adhesion in molybdenum based bifunctional catalysts for efficient water splitting
J Huang, W Han, L Li, B Gong, H Lin, P Wei… - Separation and …, 2025 - Elsevier
Electrolyzing water offers a potential solution to the energy crisis; however, the development
of a facile method for synthesizing electrode materials that possess both high robustness …
of a facile method for synthesizing electrode materials that possess both high robustness …
Bismuth surfactant-enhanced III-As epitaxy on GaAs (111) A
AM Hassanen, J Herranz, L Geelhaar… - Semiconductor …, 2023 - iopscience.iop.org
Quantum dot (QD) growth on high ($ c_ {3v} $) symmetry GaAs {111} surfaces holds promise
for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …
for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …
Tin nanoparticles–enhanced optical transportation in branched CdS nanowire waveguides
High‐efficiency multichannel waveguiding components are desirable for integrated photonic
systems to realize optical information processing and communication interconnection …
systems to realize optical information processing and communication interconnection …
Coaxial GaAs/(In, Ga) As dot-in-a-well nanowire heterostructures for electrically driven infrared light generation on Si in the telecommunication O band
Core–shell GaAs-based nanowires monolithically integrated on Si constitute a promising
class of nanostructures that could enable light emitters for fast inter-and intrachip optical …
class of nanostructures that could enable light emitters for fast inter-and intrachip optical …
Atomically resolved study of initial stages of hydrogen etching and adsorption on GaAs (110)
DS Rosenzweig, MNL Hansemann, M Schnedler… - Physical review …, 2022 - APS
The initial stages of hydrogen adsorption on GaAs (110) surfaces at room temperature are
investigated by atomically resolved scanning tunneling microscopy and spectroscopy. Two …
investigated by atomically resolved scanning tunneling microscopy and spectroscopy. Two …
Axial GaAs/Ga (As, Bi) nanowire heterostructures
Bi-containing III-V semiconductors constitute an exciting class of metastable compounds
with wide-ranging potential optoelectronic and electronic applications. However, the growth …
with wide-ranging potential optoelectronic and electronic applications. However, the growth …