Heteroepitaxial growth of III-V semiconductors on silicon
Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs) …
Review of highly mismatched III-V heteroepitaxy growth on (001) silicon
Y Du, B Xu, G Wang, Y Miao, B Li, Z Kong, Y Dong… - Nanomaterials, 2022 - mdpi.com
Si-based group III-V material enables a multitude of applications and functionalities of the
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
novel optoelectronic integration chips (OEICs) owing to their excellent optoelectronic …
High-Efficiency Solution-Processed Cu2ZnSn(S,Se)4 Thin-Film Solar Cells Prepared from Binary and Ternary Nanoparticles
Y Cao, MS Denny Jr, JV Caspar… - Journal of the …, 2012 - ACS Publications
A new solution-based method to fabricate Cu2ZnSn (S, Se) 4 (CZTSSe) thin films is
presented. Binary and ternary chalcogenide nanoparticles were synthesized and used as …
presented. Binary and ternary chalcogenide nanoparticles were synthesized and used as …
High-Q Optical Sensors for Chemical and Biological Analysis
MS Luchansky, RC Bailey - Analytical chemistry, 2012 - ACS Publications
Optical sensors represent a vitally important class of analytical tools that have been used to
provide chemical information ranging from analyte concentration and binding kinetics to …
provide chemical information ranging from analyte concentration and binding kinetics to …
Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics
Monolithic integration of III-V on silicon has been a scientifically appealing concept for
decades. Notable progress has recently been made in this research area, fueled by …
decades. Notable progress has recently been made in this research area, fueled by …
[HTML][HTML] Carbon nanotube-based black coatings
Coatings comprising carbon nanotubes are very black, that is, characterized by uniformly
low reflectance over a broad range of wavelengths from the visible to far infrared. Arguably …
low reflectance over a broad range of wavelengths from the visible to far infrared. Arguably …
Site selective integration of III–V materials on Si for nanoscale logic and photonic devices
Integrating high electron mobility III–V materials on an existing Si based CMOS processing
platform is considered as a main stepping stone to increase the CMOS performance and …
platform is considered as a main stepping stone to increase the CMOS performance and …
III–V/Ge channel MOS device technologies in nano CMOS era
CMOS utilizing high-mobility III–V/Ge channels on Si substrates is expected to be one of the
promising devices for high-performance and low power advanced LSIs in the future …
promising devices for high-performance and low power advanced LSIs in the future …
Heteroepitaxy of InP on Si (001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess …
C Merckling, N Waldron, S Jiang, W Guo… - Journal of Applied …, 2014 - pubs.aip.org
This study relates to the heteroepitaxy of InP on patterned Si substrates using the defect
trapping technique. We carefully investigated the growth mechanism in shallow trench …
trapping technique. We carefully investigated the growth mechanism in shallow trench …
[图书][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …