Many recent advances in microelectronics would not have been possible without the
development of strain induced nanodevices and bandgap engineering, in particular …

We present a critical review of the strategies used in the fabrication of mismatched
semiconductor heterostructures. By using simple concepts derived from the Matthews model …

Molecular Beam Epitaxy describes a technique in wide-spread use for the production of high-
quality semiconductor devices. It discusses the most important aspects of the MBE …

The use of fractal concepts in understanding various growth phenomena, such as molecular
beam epitaxy (MBE) or fluid flow in porous media, is increasingly important these days. This …

The 2D-3D growth mode transition during the initial stages of growth of highly strained
InGaAs on GaAs is used to obtain quantum-sized dot structures. Transmission electron …

We show that strained epitaxial layers can relax by two competing mechanisms. At large
misfit, the surface becomes rough, allowing easy nucleation of dislocations. However, strain …

Strained epitaxial layers tend initially to grow as dislocation-free islands. Here we show that
such islands, as they increase in size, may undergo a shape transition. Below a critical size …

Stranski-Krastanov (SK) growth is reported experimentally as the growth mode that is
responsible for the transition to three dimensional islands in heteroepitaxial growth. A kinetic …

We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating
the formation and the growth of a wetting film, dislocation-free island formation, and ripening …

1. Introduction Outline: 2. Phenomenology of the 2D-3D transition 2.1. 3D morphology as a
consequence of lattice mismatch 2.2. H Page 1 ( ~ Pergamon Prog. Crystal Growth and Charact …