Multiphonon absorption processes in layered structured TlGaS2, TlInS2 and TlGaSe2 single crystals

M Isik, NM Gasanly, F Korkmaz - Physica B: Condensed Matter, 2013 - Elsevier
The infrared transmittance and Raman scattering spectra in TlGaS2, TlInS2 and TlGaSe2
layered single crystals grown by Bridgman method were studied in the frequency ranges of …

Основные направления развития информационных технологий Национальной академии наук Азербайджана

АС Бондяков - Компьютерные исследования и моделирование, 2015 - mathnet.ru
Грид-инфраструктура—компьютерная инфраструктура нового типа, обеспечивающая
глобальную интеграцию информационных и вычислительных ресурсов. Грид-сегмент в …

[PDF][PDF] Structural and electronic properties of layered semiconductor chalcogenide crystals: TlGaSe

B Gurkan, S Berber - J. Indian Chem. Soc, 2019 - indianchemicalsociety.com
We report the density functional theory structure optimization and electronic structure
calculations of TlGaSe2, TlGaS2, and TlInS2 compounds. We find that there is a weak …

Lattice dynamics of Ferroelectric TlInS2 crystal

KR Allakhverdiev, FM Hashimzade… - Canadian Journal of …, 2012 - cdnsciencepub.com
In this paper we present the results of ab initio first-principle calculations of the lattice
dynamics of ternary TlInS2 semiconductor with highly anisotropic crystal structure …

Optical absorption related to Fe impurities in TlGaSe2

V Grivickas, V Gavryushin, P Grivickas… - … status solidi (a), 2011 - Wiley Online Library
Absorption measurements of TlGaSe2 crystals intentionally doped with Fe show growing
optical transitions below the band gap energies as impurity concentration increase. The …

İki boyutlu sistemlerde kusurlar

Z Şahan - acikbilim.yok.gov.tr
Bu tezde Grafen ve üçlü kalkojen bileşiklerde kusurların fiziksel özellikleri DFT ile incelendi.
Grafen şeritlerde, ikili (DV) ve tek boşluk (MV) atom kusuru gele alınmıştır. Kusurların …

Raman mikrospektroskopi araştırmaları

M Kir - acikbilim.yok.gov.tr
Bu tezde TlInS2, GeSe, klorobenzen (ClBz), serpantin minerali ve tunç olmak üzere beş
farklı malzeme çalışılmıştır. Bunlardan TlInS2'nin birim hücre parametreleri, atomik …

Ab initio Lattice Dynamics and Grüneisen Parameters of TlGaSe2

DA Huseinova, FM Hashimzade… - Japanese Journal of …, 2011 - iopscience.iop.org
The first-principles calculations of the lattice dynamics of the TlGaSe 2 ternary
semiconductor compound are presented in this paper. Calculations were performed using …

Basic directions of information technology in National Academy of Sciences of Azerbaijan

AS Bondyakov - Computer research and modeling, 2015 - mathnet.ru
AS Bondyakov, “Basic directions of information technology in National academy of sciences of
Azerbaijan”, Computer Research and Modeling, 7:3 (2015), 657–660 Computer Research and …

[PDF][PDF] Photoelectrical and optical properties of indirect bandgap semiconductors TlGaSe2 and SiC

K Gulbinas - 2015 - epublications.vu.lt
Growing interest and needs of modern semiconductor engineering require development of
new materials offering new prospects. Electronics in the future should rely on wide bandgap …