Defects in semiconductors—results from Mössbauer spectroscopy
G Weyer - Hyperfine Interactions, 2007 - Springer
Progress in the development of Mössbauer techniques with ion-implanted, radioactive
precursors to a Mössbauer isotope is discussed. Results obtained for elemental group IV …
precursors to a Mössbauer isotope is discussed. Results obtained for elemental group IV …
57Fe Mössbauer investigations in p-type Silicon Germanium single crystals
D Naidoo, HP Gunnlaugsson, K Bharuth-Ram… - Hyperfine …, 2009 - Springer
Abstract Radioactive 57 Mn+(T 1/2= 1.5 min) ions have been implanted at the ISOLDE
facility at CERN with 60 keV energy to fluences< 10 12/cm 2 into p-type Si 1− x Ge x (x< 0.1) …
facility at CERN with 60 keV energy to fluences< 10 12/cm 2 into p-type Si 1− x Ge x (x< 0.1) …
[PDF][PDF] 57Fe Mössbauer Investigations in GaAs and GaP Following Inplantation of 57Mn*.
H Masenda - 2010 - core.ac.uk
The incorporation of extrinsic defects in semiconductors by ion implantation and appropriate
annealing gives rise to instabilities that profoundly affect their electronic and optical …
annealing gives rise to instabilities that profoundly affect their electronic and optical …
Nanomaterials Science with Radioactive Ion Beams
J Räisänen - Ion beams in nanoscience and technology, 2009 - Springer
Because of the size and mass of nanostructures, their electronic and magnetic property
studies with conventional bulk measurement techniques are difficult or even impossible …
studies with conventional bulk measurement techniques are difficult or even impossible …