[HTML][HTML] Monolithic cmos sensors for high energy physics–challenges and perspectives
W Snoeys - Nuclear instruments and methods in physics research …, 2023 - Elsevier
CMOS cameras revolutionized the visible imaging world, and now also move into other
fields. After years of intensive research with significant progress and introduction in a few …
fields. After years of intensive research with significant progress and introduction in a few …
Influence of halo implantations on the total ionizing dose response of 28-nm pMOSFETs irradiated to ultrahigh doses
In this paper, the total ionizing dose (TID) response of a commercial 28-nm high-k CMOS
technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs …
technology at ultrahigh doses is measured and discussed. The degradation of pMOSFETs …
Characterization and modeling of gigarad-TID-induced drain leakage current of 28-nm bulk MOSFETs
This paper characterizes and models the effects of total ionizing dose (TID) up to 1 Grad
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …
(SiO 2) on the drain leakage current of nMOSFETs fabricated with a commercial 28-nm bulk …
Charge-based modeling of radiation damage in symmetric double-gate MOSFETs
In this paper, a comprehensive charge-based predictive model of interface and oxide
trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed …
trapped charges in undoped symmetric long-channel double-gate MOSFETs is developed …
Total ionizing dose effects on analog performance of 65 nm bulk CMOS with enclosed-gate and standard layout
M Bucher, A Nikolaou, A Papadopoulou… - 2018 IEEE …, 2018 - ieeexplore.ieee.org
High doses of ionizing irradiation cause significant shifts in design parameters of standard
bulk silicon CMOS. Analog performance of a commercial 65 nm CMOS technology is …
bulk silicon CMOS. Analog performance of a commercial 65 nm CMOS technology is …
Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses
G Borghello - 2019 - air.uniud.it
This thesis studies the effects of radiation in nanoscale CMOS technologies exposed to ultra-
high total ionizing doses (TID), up to 1 Grad (SiO2). These extreme radiation levels are …
high total ionizing doses (TID), up to 1 Grad (SiO2). These extreme radiation levels are …
[HTML][HTML] A generalized EKV charge-based MOSFET model including oxide and interface traps
This paper presents a generalized EKV charge-based MOSFET model that includes the
effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that …
effects of trapped charges in the oxide bulk and at the silicon/oxide interface. It is shown that …
Generic Analog 8 Bit DAC IP Block in 28nm CMOS for the High Energy Physics Community
M Piller, R Ballabriga, FN Bandi… - 2022 Austrochip …, 2022 - ieeexplore.ieee.org
The High Energy Physics (HEP) microelectronic design community is leading a CMOS
technology change from Application Specific Integrated Circuit (ASIC) designs in 130nm and …
technology change from Application Specific Integrated Circuit (ASIC) designs in 130nm and …
A Radiation-Tolerant 25.6 Gbps High-Speed Transmitter in 28 nm CMOS with a tolerance of 1 Grad
A Klekotko, S Biereigel, M Baszczyk… - … on Nuclear Science, 2024 - ieeexplore.ieee.org
This article presents a 25.6-Gbit s− 1 high-speed transmitter (HST) manufactured using 28-
nm CMOS technology. The HST macroblock includes an all-digital phase-locked loop …
nm CMOS technology. The HST macroblock includes an all-digital phase-locked loop …
Towards a generic receiver chain for particle detectors
L Krystofiak, F Rössing, A Zambanini… - Journal of …, 2022 - iopscience.iop.org
A software-adaptable receiver tackles some of the highest challenges in particle detector
development. While a generic approach never reaches the same performance as a …
development. While a generic approach never reaches the same performance as a …