Tunable photo-response in the visible to NIR spectrum range of Germanium-based junctionless nanowire transistor

V Sharma, N Kumar, S Sharma, P Singh… - …, 2024 - iopscience.iop.org
In this paper, the phototransistor behavior is investigated in the germanium-on-insulator
(GeOI)-based junctionless nanowire (JL-NW) transistor under various light conditions. High …

Modeling of inner-outer gates and temperature dependent gate-induced drain leakage current of junctionless double-gate-all-around FET

N Kumar, A Mishra, A Gupta, P Singh - Microelectronics Journal, 2024 - Elsevier
In this paper, the temperature-dependent gate-induced drain leakage (GIDL) current model
is proposed with the help of a lateral electric field (EL) across the inner and outer gate …

Piezoresistive sensitivity enhancement below threshold voltage in sub-5 nm node using junctionless multi-nanosheet FETs

N Kumar, K Joshi, A Gupta, P Singh - Nanotechnology, 2024 - iopscience.iop.org
In this paper, the piezoresistive sensitivity is enhanced by applying uniform mechanical
stress (MS) on the multi-nanosheet (NS) channels of sub-5 nm junctionless field-effect …

Silicon-Germanium Ultrashort-Gate Transistor Performances by Electrical-Thermal Simulations

S Yamakiri, T Sugiura, K Yamamura… - IEEE Transactions …, 2024 - ieeexplore.ieee.org
As a replacement for conventional silicon (Si), the germanium (Ge) materials have attracted
interest because Ge provides larger carrier mobility and is advantageous for high-speed …

Exploring Innovations, Sustainability and Future Opportunities in Semiconductor Technologies

LA Yeboah, PA Oppong, AA Malik… - International …, 2024 - researchlakejournals.com
Semiconductor technology is the backbone of modern innovations, propelling technological
advancements in industries such as electronics, renewable energy, telecommunications …

[PDF][PDF] Exploring the Frontier of Semiconductor Technologies: Innovations, Sustainability and Future Opportunities—A Review

L Yeboah, P Agyemang, AA Malik, P Acheampong… - 2024 - preprints.org
Semiconductor technology is the backbone of modern innovations, propelling technological
advancements in industries such as electronics, renewable energy, telecommunications …

Impact of Back End of Line (BEOL) and Ambient Temperature on Self-Heating in Twin Nanowire Gate-All-Around FETs: Junctionless Mode Versus Inversion Mode

N Kumar, K Gupta, A Gupta, A Gupta… - 2024 8th IEEE Electron …, 2024 - ieeexplore.ieee.org
Overall, the impact of BEOL effective thermal resistance (R_TH) and isothermal ambient
temperature (T_A) on the self-heating effect (SHE) in twin nanowire gate-all-around FETs …

Carrier Tunnelings on Ultrashort‐Gate Junction‐Less Field‐Effect Transistor Designs

T Sugiura - physica status solidi (RRL)–Rapid Research Letters - Wiley Online Library
This study discusses tunneling problems encountered when designing ultrashort‐gate
junction‐less field‐effect transistors (FETs). Ultrathin‐body silicon‐on‐insulator (UTB‐SOI) …