In this paper, we review the radiation damage issues caused by displacement damage in
silicon sensors operating in the harsh radiation environments of high energy physics …

This work focuses on the investigation of radiation-induced defects responsible for the
degradation of silicon detector performance. Comparative studies of the defects induced by …

Photoluminescence, infrared absorption, positron annihilation, and deep-level transient
spectroscopy (DLTS) have been used to investigate the radiation damage produced by 24 …

This work is focusing on generation, time evolution, and impact on the electrical
performance of silicon diodes impaired by radiation induced active defects. n-type silicon …

In this work, the effects of 60 Co γ-ray irradiation on high resistivity p-type diodes have been
investigated. The diodes were exposed to dose values of 0.1, 0.2, 1, and 2 MGy. Both …

The Large Hadron Collider (LHC) at the European Organization for Nuclear Research
(CERN) addresses some of today's most fundamental questions of particle physics, like the …

In this work the thermal kinetics of the transformation from the divacancy (V 2) to the
divacancy-oxygen (V 2 O) complex has been studied in detail, and activation energies,(E a) …

Cluster related defects were investigated by the thermally stimulated current (TSC) method
in neutron irradiated n-type Si diodes during 80 C annealing. Three hole traps labeled H …

In this work, the thermally stimulated current (TSC) technique has been used to investigate
the properties of the radiation-induced interstitial boron and interstitial oxygen defect …

The dependencies of the B i O i defect concentration on doping, irradiation fluence and
particle type in p-type silicon diodes have been investigated. We evidenced that large data …