The mechanism of metal spikes on the p+ emitter and the regulation of silicon interface corrosion by modifying the surface of aluminum powder
X Zhou, Z Guo, H Zhang, S Ma, H Wang - Journal of Alloys and Compounds, 2025 - Elsevier
Due to the difference in work function of p+ emitter and n+ emitter, the metallization process
required re-doping to achieve ohmic contact between the metal and silicon interfaces. To …
required re-doping to achieve ohmic contact between the metal and silicon interfaces. To …
Enhanced Bifacial III–V/Silicon Multijunction Solar-Cell-Based Promising Structure of c-Si Bottom Cells
We present a structural design for a four-terminal III–V/crystalline silicon (c-Si) multijunction
(MJ) device based on optimized bifacial illumination. The proposed configuration consists of …
(MJ) device based on optimized bifacial illumination. The proposed configuration consists of …
Simulation of a Silicon Solar Cell Using Triple-Layer Anti-Reflection Coatings (ARC)
NII Mohd Jamaluddin, MZM Yusoff… - Key Engineering …, 2024 - Trans Tech Publ
Considering solar energy is being used more and more frequently in recent years,
numerous studies have been conducted in order to improve the performance of the solar …
numerous studies have been conducted in order to improve the performance of the solar …
Enhancement of Near‐Infrared Photovoltaic Response of Si/Au Schottky‐Junction Structure by Band‐Bending Approaches
Y Yang, X Dai, D Shen, L Wu, L Yu, F Ma, K Liu… - physica status solidi … - Wiley Online Library
A combined approach of band bending is employed to enhance the near‐infrared (NIR)
photovoltaic (PV) response of a Si/Au Schottky junction (SHJ) device. As a reference, the …
photovoltaic (PV) response of a Si/Au Schottky junction (SHJ) device. As a reference, the …