Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

Electro-absorption from GeSi heterostructures is receiving growing attention as a high
performance optical modulator for short distance optical interconnects. Ge incorporation with …

We report an extensive study of strained Ge/Si 0.2 Ge 0.8 multiquantum wells grown by
ultrahigh-vacuum chemical-vapor deposition. The microstructural properties of the samples …

It is known that under a tensile strain of about 2% of the lattice constant, the energy of the
bottom conduction state of bulk Ge at the Γ point falls below the minimum at the L point …

With germanium showing significant promise in the design of electroabsorption modulators
for full complementary metal oxide semiconductor integration, we present a simple …

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is
reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain …

We describe a combined 6× 6 k· p and one-band effective mass modelling tool to calculate
absorption spectra in Ge-SiGe multiple quantum well (MQW) heterostructures. We find good …

Polarization resolved absorption spectra of a strain-compensated Ge multiple quantum well
(MQW) structure with Ge-rich SiGe barriers have been calculated with an sp 3 d 5 s∗ tight …

We report room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum
wells (MQWs) with light propagating parallel to the plane of the Ge/SiGe MQWs for …

Abstract The Rashba effect in Ge/Si0. 15Ge0. 85 multiple quantum wells embedded in ap‐i‐
n diode is studied through polarization and time‐resolved photoluminescence. In addition to …