Metal oxide semiconductor-based Schottky diodes: a review of recent advances

NA Al-Ahmadi - Materials Research Express, 2020 - iopscience.iop.org
Abstract Metal-oxide-semiconductor (MOS) structures are essential for a wide range of
semiconductor devices. This study reviews the development of MOS Schottky diode, which …

Zn Doped α-Fe2O3: An Efficient Material for UV Driven Photocatalysis and Electrical Conductivity

Suman, S Chahal, A Kumar, P Kumar - crystals, 2020 - mdpi.com
Zinc (Zn) doped hematite (α-Fe2O3) nanoparticles with varying concentrations (pure, 2%,
4% and 6%) were synthesized via sol-gel method. The influence of divalent Zn ions on …

Dielectric characterization of fiber‐and nanofiller‐reinforced polymeric materials

R Quader, LK Narayanan… - Journal of Applied …, 2024 - Wiley Online Library
This review provides an in‐depth analysis of the electrical responses and relaxation
behaviors of various polymeric materials including fiber‐reinforced polymer composites …

Complex dielectric, complex electric modulus, and electrical conductivity in Al/(Graphene-PVA)/p-Si (metal-polymer-semiconductor) structures

S Karadaş, SA Yerişkin, M Balbaşı… - Journal of Physics and …, 2021 - Elsevier
In this study, the real and imaginary components of the complex dielectric (ε*= ε′-jε'′),
complex electric modulus (M*= M′+ jM'′), and electrical conductivity (σ ac) were …

Frequency and voltage-dependent dielectric spectroscopy characterization of Al/(Coumarin-PVA)/p-Si structures

S Demirezen, SA Yerişkin - Journal of Materials Science: Materials in …, 2021 - Springer
In this study, the frequency/voltage dependence of the dielectric constant (ε′), dielectric
loss (ε ″), real/imaginary components of the complex electric modulus (M′, M ″), tangent …

Doping rate, Interface states and Polarization Effects on Dielectric Properties, Electric Modulus, and AC Conductivity in PCBM/NiO:ZnO/p-Si Structures in Wide …

S Demirezen, HG Çetinkaya, Ş Altındal - Silicon, 2022 - Springer
In order to study, in detail, the relationship of effect of NiO doping in ZnO on AC electrical-
conductivity (σac), complex-permittivity (ɛ*), complex-electric modulus (M*) and interface …

Characterization of Al/In: ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers

M Yıldırım, A Kocyigit - Journal of Alloys and Compounds, 2018 - Elsevier
The detection of the light by a device is so important for industrial applications such as
energy harvesting, sensing and switching. For that aim, we have introduced various In …

Structural, morphological, electrical and dielectric properties of Mn doped CeO2

P Kumar, P Kumar, A Kumar, RC Meena… - Journal of Alloys and …, 2016 - Elsevier
Present study reports the structural and dielectric properties of Ce 1-x Mn x O 2 (0≤ x≤
0.15) compounds synthesized by solid state reaction method. X-ray diffraction and Raman …

Frequency and voltage dependence of barrier height, surface states, and series resistance in Al/Al2O3/p-Si structures in wide range frequency and voltage

ÇG Türk, SO Tan, Ş Altındal, B İnem - Physica B: Condensed Matter, 2020 - Elsevier
Abstract In this study, Al/Al 2 O 3/p-Si (MIS) type structures were fabricated and then the
effects of Al 2 O 3 interlayer on the electrical characteristics have been investigated at room …

Enhanced photosensitive of Schottky diodes using SrO interfaced layer in MIS structure for optoelectronic applications

V Balasubramani, PV Pham, A Ibrahim, J Hakami… - Optical Materials, 2022 - Elsevier
In this study, the Schottky diodes (SDs) based on an interfacial layer of strontium oxide (SrO)
thin film were fabricated. Thin films (TFs) were coated on glass and silicon substrates by low …