After many years of research and development, silicon carbide has emerged as one of the
most important wide band gap semiconductors. The first commercial SiC devices? power …

Electrical stimulation was restrained by an external power supply and wires, despite its
ability to promote nerve cell growth. Bismuth sulfide (Bi 2 S 3) offered a novel prospect for …

A new physically based model which is implemented in Saber MAST (R) and usable for
circuit simulation in order to calculate the static and dynamic behaviour of IGCT devices …

The parameters of electron–hole scattering EHS in silicon carbide SiC are estimated by
analyzing pulsed isothermal current–voltage characteristics of 6.0 kV 4H–SiC diodes over a …

It has been demonstrated that the field dependence of the electron and hole mobility
strongly affects the carrier distribution in semiconductor structures under quasineutral …

It is demonstrated that, in addition to the well-known quasineutral modes of carrier transport,
ie, those of quasineutral diffusion and quasineutral drift, a quasineutral mode of diffusion …

In this thesis, a physically rigorous model for the simulation of internal laser probing
techniques for semiconductor power devices is developed which is employed for a thorough …

Electron-hole scattering (EHS) affects the operation of all bipolar semiconductor devices at a
high current density. From a physical point of view, EHS has always been considered an …

The new equations of minority carrier hole and electron injection levels kp and kn valid at
high-level injection have been derived. They relate the kp and kn and the voltage drop …

The influence of the combined effects of high injection level and heavy doping on the
characteristics of silicon p+–n–n+ solar cells is examined. The total amount of nonlinear …