In this paper, we review the application of a recent formula for the lattice thermal conductivity
to silicon and germanium, which are two of the most commonly used materials in electronic …

A new algorithm for Monte Carlo simulations of charge transport in semiconductors is
devised in order to properly deal with Pauli's exclusion principle in the degenerate case …

We study the instability of plasmons in a dual-grating-gate graphene field-effect transistor
induced by dc current injection using self-consistent simulations with the Boltzmann …

In this paper we present a hydrodynamical model for the description of the charge transport
in graphene, including heating effects on the crystal lattice, and conversely the influence of …

Charge transport in suspended monolayer graphene is simulated by a numerical
deterministic approach, based on a discontinuous Galerkin (DG) method, for solving the …

A graphene field effect transistor (GFET), where the active area is made of monolayer large-
area graphene, is simulated including a full 2D Poisson equation and a drift-diffusion model …

A hydrodynamical model for simulating charge transport in graphene is formulated by using
of the maximum entropy principle. Both electrons in the conduction band and holes in the …

An ensemble optimal control problem governed by a semiclassical space-homogeneous
Boltzmann equation for charge transport in graphene is formulated and analyzed. The …

The maximum entropy principle is applied to the formal derivation of isothermal, Euler-like
equations for semiclassical fermions (electrons and holes) in graphene. After proving …

We present a macroscopic model for describing the electrical and thermal behaviour of
silicon devices. The model makes use of a set of macroscopic state variables for phonons …