Wurtzite and fluorite ferroelectric materials for electronic memory
Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …
continued research interest since their discovery more than 100 years ago. The …
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 …
K Toprasertpong, K Tahara, Y Hikosaka… - … Applied Materials & …, 2022 - ACS Publications
The comparatively high coercive field in Hf0. 5Zr0. 5O2 (HZO) and other HfO2-based
ferroelectric thin films leads to two critical challenges for their application in embedded …
ferroelectric thin films leads to two critical challenges for their application in embedded …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide
M Lederer, R Olivo, D Lehninger… - physica status solidi …, 2021 - Wiley Online Library
Ferroelectric hafnium oxide (HfO2) is considered a very prospective material for applications
in integrated devices due to its considerably large spontaneous polarization and superior …
in integrated devices due to its considerably large spontaneous polarization and superior …
Ferroelectric field effect transistors as a synapse for neuromorphic application
In spite of the increasing use of machine learning techniques, in-memory computing and
hardware have increased the interest to accelerate neural network operation. Henceforth …
hardware have increased the interest to accelerate neural network operation. Henceforth …
Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering
In this paper, we achieved excellent variation control, endurance enhancement, and
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
Sub‐microsecond polarization switching in (Al, Sc) N ferroelectric capacitors grown on complementary metal–oxide–semiconductor‐compatible aluminum electrodes
D Wang, P Musavigharavi, J Zheng… - physica status solidi …, 2021 - Wiley Online Library
The frequency‐dependent ferroelectric properties of 45 nm (Al, Sc) N films sputter deposited
on complementary metal–oxide–semiconductor (CMOS)‐compatible Al metal electrodes are …
on complementary metal–oxide–semiconductor (CMOS)‐compatible Al metal electrodes are …
Review on the microstructure of ferroelectric hafnium oxides
Ferroelectric hafnium oxide is of major interest for a multitude of applications in
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
microelectronics, ranging from neuromorphic devices to actuators and sensors. While the …
Influence of annealing temperature on the structural and electrical properties of Si-doped ferroelectric hafnium oxide
The ferroelectric properties of hafnium oxide films are strongly influenced by the
crystallization process due to the interaction of thermodynamics, kinetics, and mechanical …
crystallization process due to the interaction of thermodynamics, kinetics, and mechanical …