BACKGROUND For the past several decades, the scaling of features in integrated circuits
has been a driving force behind an ever-growing semiconductor industry. Scaling to Smaller …

US9825117B2 - MIM/RRAM structure with improved capacitance and reduced leakage current
- Google Patents US9825117B2 - MIM/RRAM structure with improved capacitance and reduced …

(57) ABSTRACT A method for forming a DRAMMIM capacitor stack having low leakage
current involves the use of a first electrode that serves as a template for promoting the high-k …

(57) ABSTRACT A unit cell structure in a non-volatile semiconductor device includes a lower
electrode. The variable resistor is formed on the lower electrode and includes a first …

Some embodiments of the present disclosure provide an integrated circuit (IC) device
including a metal-insulator metal (MIM) capacitor structure. The MIM capacitor struc ture …

It is one objective of the present invention to provide a capacitor structure with multiple
dielectric layers to increase capacitance and prevent current leakage. 0008 According to a …

BACKGROUND 0001 Nanoscale electronics promise a number of advan tages including
significantly reduced features sizes and the potential for self-assembly and for other …

Disclosed are semiconductor memory devices and methods of fabricating the same. The
semiconductor memory device comprises a capacitor that includes a bottom electrode, a top …

Disclosed is a method for forming a capacitor of a semicon ductor device. In such a method,
a mold insulating layer is formed on an insulating interlayer provided with a storage (56) …

US20110298089A1 - Trench capacitor and method of fabrication - Google Patents
US20110298089A1 - Trench capacitor and method of fabrication - Google Patents Trench …