Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

Electrolyte-based ionic control of functional oxides

C Leighton - Nature materials, 2019 - nature.com
The use of electrolyte gating to electrically control electronic, magnetic and optical properties
of materials has seen strong recent growth, driven by the potential of the many devices and …

Magneto-ionic control of magnetism using a solid-state proton pump

AJ Tan, M Huang, CO Avci, F Büttner, M Mann, W Hu… - Nature Materials, 2019 - nature.com
Voltage-gated ion transport as a means of manipulating magnetism electrically could enable
ultralow-power memory, logic and sensor technologies. Earlier work made use of electric …

On‐demand reconfiguration of nanomaterials: when electronics meets ionics

J Lee, WD Lu - Advanced Materials, 2018 - Wiley Online Library
Rapid advances in the semiconductor industry, driven largely by device scaling, are now
approaching fundamental physical limits and face severe power, performance, and cost …

Roadmap on magnetoelectric materials and devices

X Liang, A Matyushov, P Hayes, V Schell… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The possibility of tuning the magnetic properties of materials with voltage (converse
magnetoelectricity) or generating electric voltage with magnetic fields (direct …

Opportunities and challenges for magnetoelectric devices

JM Hu, CW Nan - Apl Materials, 2019 - pubs.aip.org
Magnetoelectric effect enables controlling magnetism with an electric field or controlling
polarization remotely with a magnetic field, without involving any driving electric currents …

Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in developing voltage-torque MRAM

T Nozaki, T Yamamoto, S Miwa, M Tsujikawa, M Shirai… - Micromachines, 2019 - mdpi.com
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …

Sub-volt switching of nanoscale voltage-controlled perpendicular magnetic tunnel junctions

Y Shao, V Lopez-Dominguez, N Davila, Q Sun… - Communications …, 2022 - nature.com
Magnetic random-access memory (MRAM) based on voltage-controlled magnetic anisotropy
in magnetic tunnel junctions (MTJs) is a promising candidate for high-performance …

[HTML][HTML] Advances in magneto-ionic materials and perspectives for their application

M Nichterwitz, S Honnali, M Kutuzau, S Guo, J Zehner… - APL materials, 2021 - pubs.aip.org
The possibility of tuning magnetic material properties by ionic means is exciting both for
basic science and, especially in view of the excellent energy efficiency and room …

Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives

JM Hu, CG Duan, CW Nan, LQ Chen - NPJ Computational Materials, 2017 - nature.com
Magnetoelectric composites and heterostructures integrate magnetic and dielectric materials
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …