This paper reviews the rapid progress being made in the developments of organic/inorganic blue light emitting diodes (LEDs). Blue LEDs exhibits outstanding electrical and optical …
Current injection efficiency and internal quantum efficiency (IQE) in InGaN quantum well (QW) based light emitting diodes (LEDs) are investigated. The analysis is based on current …
H Zhao, RA Arif, YK Ee, N Tansu - IEEE Journal of Quantum …, 2008 - ieeexplore.ieee.org
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting diodes. The strain-compensated QW structure consists …
The design of InGaN-delta-InN quantum wells (QWs) leads to significant redshift for nitride active region with large electron-hole wave function overlap (Γ e _ hh) and spontaneous …
The progress in III-Nitride photonics research in 2009 is reviewed. The III-Nitride photonics research is a very active field with many important applications in the areas of energy …
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at 520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
P Zhao, H Zhao - Optics express, 2012 - opg.optica.org
The enhancement of light extraction efficiency for thin-film flip-chip (TFFC) InGaN quantum wells (QWs) light-emitting diodes (LEDs) with GaN micro-domes on n-GaN layer was …
H Zhao, RA Arif, N Tansu - IEEE Journal of selected topics in …, 2009 - ieeexplore.ieee.org
Staggered InGaN quantum wells (QWs) are analyzed as improved active region for light- emitting diodes (LEDs) emitting at 500 nm and 540 nm, respectively. The calculation of band …
H Zhao, N Tansu - Journal of Applied Physics, 2010 - pubs.aip.org
Staggered InGaN quantum wells (QWs) are analyzed as improved gain media for laser diodes (LDs) lasing at 440 and 500 nm. The calculation of band structure is based on a 6 …